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SMAU1D PDF预览

SMAU1D

更新时间: 2024-09-26 22:50:15
品牌 Logo 应用领域
KEC 整流二极管开关光电二极管瞄准线超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 384K
描述
ULTRA FAST RECOVERY RECTIFIER DIODE (SWITCHING TYPE POWER SUPPLY)

SMAU1D 技术参数

生命周期:Not Recommended包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

SMAU1D 数据手册

 浏览型号SMAU1D的Datasheet PDF文件第2页 
SEMICONDUCTOR  
SMAU1D  
ULTRA FAST RECOVERY RECTIFIER DIODE  
TECHNICAL DATA  
SWITCHING TYPE POWER SUPPLY APPLICATIONS.  
2
FEATURES  
H
Ultra-Fast Recovery Time for High Efficiency.  
Low Profile Surface Mount Package.  
Low Forward Voltage Drop, High current Capability, and  
Low Power Loss.  
1
APPLICATION  
C
B
Switching Power Supply.  
DIM  
A
MILLIMETERS  
_
4.5+0.2  
DC/DC Converter.  
Home Appliances, Office Equipment.  
Telecommunication, Factory Automation.  
_
2.6+0.2  
B
_
1.5+0.2  
C
_
5.0+0.3  
D
_
1.2+0.3  
E
G
_
2.0+0.2  
F
G
0 ~ 0.15  
R 0.5  
H
1. ANODE  
2. CATHODE  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
VRRM  
IO  
RATING  
UNIT  
V
Maximum Repetitive Peak Reverse Voltage  
Average Output Rectitifed Current  
200  
1
SMA  
A
Peak One Cycle Surge Forward Current  
(Non-Repetitive 60Hz)  
IFSM  
33  
A
Tj  
Junction Temperature  
-40 150  
-40 150  
Tstg  
Storage Temperature Range  
Marking  
Type Name  
U 1 D  
Lot No.  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Peak Forward Voltage  
SYMBOL  
VFM  
TEST CONDITION  
IFM=1.0A  
MIN.  
TYP.  
MAX.  
0.98  
10  
UNIT  
V
-
-
-
-
-
-
-
-
IRRM  
VRRM=Rated  
Repetitive Peak Reverse Current  
Reverse Recovery Time  
A
trr  
IF=100mA, IR=200mA  
Junction to lead  
50  
ns  
Rth(j-1)  
23  
/W  
Thermal Resistance  
Junction to ambient  
Rth(j-a)  
-
-
108  
/W  
(on alumina substrate)  
2002. 3. 7  
Revision No : 3  
1/2  

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