Datasheet > SM8Z

SM8Z

更新时间： 2024-10-03 12:56:43

品牌	Logo	应用领域
优恩 - UNSEMI		半导体测试脉冲电子
页数	文件大小	规格书
4页	526K
描述
优恩半导体公司针对车用电子设备，推出全新产品SM8Z及S5Z系列，经车辆测试中心实际测试，SM8Z系列及SM5Z系列产品比我司之前生产的SM8S系列抗冲击能力更强，可媲美Vishay的SM8S系列及SM5S系列，能满足ISO-7637-2波形，5A抛负载脉冲测试，拥有极高的防护能力，从而大大提高了汽车电子产品的可靠性。

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SM8Z 数据手册

Surface Mount Transient Voltage Suppressors

SM8Z Series 14 To 43 V 6600W

Description

The SM8Z series is designed specifically to protect sensitive

electronic equipment from voltage transients induced by lightning

and other transient voltage events.

Working Voltage: 14 to 43 V

Peak Pulse Power: 6600 W

Features



Glass passivated chip

6600 W peak pulse power capability with a

10/1000 us waveform, repetitive rate (duty

cycle):0.01 %

Mechanical Data



Case: DO-218AB

Epoxy: UL 94V-0 rate flame retardant



T J = 175 °C capability suitable for high reliability

and automotive requirement

Meets ISO7637-2 surge specification (varied by test

condition)Meet AEC-Q101 requirement

Low leakage



Polarity: Heatsink is anode

Primary Characteristics

V_RWM

P_PPM(10/1000µs)

P_PPM(10/10000µs)

P _D

14V to 43V

6600W

5200W



Uni-directional polarity

Excellent clamping capability

Very fast response time

I _FSM

700A

RoHS compliant

T _{J max.}

175°C

Applications

Package

DO-218AB

Use in sensitive electronics protection against voltage transients

induced by inductive load switching and lighting, especially for

automotive load dump protection application

Maximum Ratings and Thermal Characteristics (T A =25 ℃ unless otherwise noted)

Parameter

with 10/1000µs waveform

with 10/10000µs waveform

Symbol

P_PPM

Value

6600

5200

Units

Peak Pulse Power Dissipation

Power Dissipation on Infinite Heat Sink at T_L=25°C (Fig.1)

Peak Pulse Current with a 10/1000µs waveform

P_D

I _PP

See Next Table

700

Peak forward surge current 8.3 ms single half sine Wave

I _FSM

T _J, T _STG

Operating junction and storage temperature range

Typical thermal resistance, junction to case

–55 to +175

°C

R _θJC

0.90

°C /Watt

Note:(1)Non-repetitive current pulse per Fig.2 and derated above T A = 25 °C per Fig.1

UN Semiconductor Co., Ltd.

www.unsemi.com.tw

@ UN Semiconductor Co., Ltd. 2013

Specifications are subject to change without notice.

Revision February 2, 2015

1 / 4

Please refer to www.unsemi.com.tw for current information.

12 3 4

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SM8Z11A	LGE	获取价格	Automotive Protection Surface Mount Transient Voltage Suppressors
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SM8Z12A	LGE	获取价格	Automotive Protection Surface Mount Transient Voltage Suppressors
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SM8Z13A	LGE	获取价格	Automotive Protection Surface Mount Transient Voltage Suppressors
SM8Z13A	SWST	获取价格	瞬态电压抑制管
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