Datasheet > SM8S16A-E3

SM8S16A-E3

更新时间： 2024-09-28 01:25:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	94K
描述
Surface Mount PAR Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SM8S16A-E3 数据手册

SM8S10 thru SM8S43A

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• Low leakage current

• Low forward voltage drop

DO-218AB

• High surge capability

• Meets ISO7637-2 surge specification (varied by test

condition)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_BR

11.1 V to 52.8 V

TYPICAL APPLICATIONS

_PPM(10 x 1000 μs)

6600 W

5200 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

_PPM(10 x 10 000 μs)

P_D

8 W

V_WM

10 V to 43 V

700 A

I_FSM

MECHANICAL DATA

Case: DO-218AB

T_Jmax.

Polarity

175 °C

Uni-directional

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Package

DO-218AB

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

with 10/1000 μs waveform

Peak pulse power dissipation

6600

P_PPM

P_D

with 10/10 000 μs waveform

5200

8.0

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

(1)

I_PPM

See next table

Peak forward surge current 8.3 ms single half sine-wave

Operating junction and storage temperature range

I_FSM

700

T_J, T_STG

-55 to +175

°C

Note

(1)

Non-repetitive current pulse derated above T_A= 25 °C

Revision: 18-Sep-12

Document Number: 88387

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SM8S16A-E3相关器件

型号	品牌	获取价格	描述	数据表
SM8S16A-E3/2D	VISHAY	获取价格	Diode TVS Single Uni-Dir 16V 6.6KW 2-Pin DO-218AB T/R
SM8S16AHE3	MCC	获取价格	Tape&Reel: 750pcs/Reel;
SM8S16AHE3/2D	VISHAY	获取价格	DIODE 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAG
SM8S16AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S16AQ	YANGJIE	获取价格	DO-218AB
SM8S16A-Q1	ANBON	获取价格	DO-218AB
SM8S16A-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode
SM8S16C	EIC	获取价格	Trans Voltage Suppressor Diode, 6600W, 16V V(RWM), Bidirectional, 2 Element, Silicon, TO-2
SM8S16CA	SUNMATE	获取价格	SURFACE MOUNT Automotive transient voltage suppressors
SM8S16CA	WEEN	获取价格	SM8S series, 6600W transient voltage suppressor (TVS) in DO218 package, designed to protec

与SM8S16A-E3相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

15
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

27

产品中心

服务支持

精选活动

关于我们

帮助中心

SM8S16A-E3

SM8S16A-E3 数据手册

与SM8S16A-E3相关器件

与SM8S16A-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SM8S16A-E3

SM8S16A-E3 数据手册

与SM8S16A-E3相关器件

与SM8S16A-E3相关文章

您还可以找

您在本页遇到什么问题？