TVS Diode Arrays (SPA®® Diodes)
General Purpose ESD Protection - SM712
Absolute Maximum Ratings
Symbol
Parameter
Peak Pulse Power (tp=8/20μs)
Value
600
Units
W
PPk
19
IPP
Peak Pulse Current (tp=8/20μs)
OperatingTemperature
StorageTemperature
A
TOP
TSTOR
-40 to 125
-55 to 150
°C
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
SM712 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
Test Conditions
IR≤1μA, Pin ± to Pin 1 or Pin 2
IR≤1μA, Pin 1 or Pin 2 to Pin ±
IR=1mA, Pin ± to Pin 1 or Pin 2
IR=1mA, Pin 1 or Pin 2 to Pin ±
VR=7V
Min
Typ
Max
7. 0
Units
V
Reverse Standoff Voltage
12.0
V
7. 5
V
Reverse Breakdown
Voltage
VR
1±.±
V
20
1
μA
μA
V
Leakage Current
ILEAK
VR=12V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
IPP=1A, tp=8/20µs, Pin ± to Pin 1 or Pin 2
IPP=19A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
IPP=19A, tp=8/20µs, Pin ± to Pin 1 or Pin 2
19
11
±1
19
V
Clamp Voltage1
VC
V
V
Dynamic Resistance1
RDYN
VESD
(VC2 - VC1) / (IPP2 - IPP1
)
0.5
Ω
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
±±0
±±0
kV
kV
ESD Withstand Voltage1
Reverse Bias=0V, f=1MHz;
Pin 1 or Pin 2 to Pin ±
Diode Capacitance1
CI/O-GND
75
pF
Notes : 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Bias
ClampingVoltage vs. IPP
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
Pin 1 or Pin 2 to Pin 3
Pin 3 to Pin 1 or Pin 2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
Bias Voltage (V)
Peak Pulse Current-IPP (A)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19