Datasheet > SM6T200A-E3/51

SM6T200A-E3/51

更新时间： 2024-10-01 07:11:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
Trans Voltage Suppressor Diode, 600W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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SM6T200A-E3/51 数据手册

SM6T Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• 600 W peak pulse power capability with a

10/1000 µs waveform

• Available in Unidirectional and Bidirectional

• Excellent clamping capability

• Low inductance

DO-214AA (SMB)

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MAJOR RATINGS AND CHARACTERISTICS

TYPICAL APPLICATIONS

V_(BR)

6.8 V to 220 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

P_PPM

600 W

P_D

5.0 W

I_FSM(Unidirectional only)

T_jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use CA suffix (e.g.

SM6T12CA).

Electrical characteristics apply in both directions.

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the band denotes

cathode end, no marking on bidirectional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

Minimum 600

see next table

5.0

UNIT

Peak pulse power dissipation on 10/1000 µs waveform ^(1,2)(Fig. 1)

Peak power pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Power dissipation on infinite heatsink T_A= 50 °C

P_D

Peak forward surge current 10 ms single half sine-wave uni-directional only ⁽²⁾

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

- 65 to +150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number 88385

08-Sep-06

www.vishay.com

12 3 4 5

中文翻译

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与SM6T200A-E3/51相关器件

型号	品牌	获取价格	描述	数据表
SM6T200A-E3/52	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
SM6T200A-E3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T200AHE3/52	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
SM6T200A-HE3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T200A-HE3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T200AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SM6T200AHM3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SM6T200A-M3/5B	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
SM6T200CA	SUNMATE	获取价格	600W patch TVS transient suppression diode SMB 200V
SM6T200CA	STMICROELECTRONICS	获取价格	TRANSILTM

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