5秒后页面跳转
SM6S26A2E PDF预览

SM6S26A2E

更新时间: 2024-01-31 13:04:13
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 27K
描述
Trans Voltage Suppressor Diode, 3600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB

SM6S26A2E 数据手册

 浏览型号SM6S26A2E的Datasheet PDF文件第2页浏览型号SM6S26A2E的Datasheet PDF文件第3页 
SM6S Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Automotive Transient Voltage Suppressors  
Stand-off Voltage 10 to 36V  
Peak Pulse Power 4600W (10/1000µs)  
3600W (10/10,000µs)  
DO-218AB  
0.628(16.0)  
0.592(15.0)  
0.539(13.7)  
0.524(13.3)  
0.116(3.0)  
0.093(2.4)  
Mounting Pad Layout  
0.413(10.5) 0.342(8.7)  
0.374(9.5) 0.327(8.3)  
0.091(2.3)  
0.067(1.7)  
0.116(3.0)  
0.093(2.4)  
0.413(10.5)  
0.374(9.5)  
0.366(9.3)  
0.343(8.7)  
Dimensions in  
inches and (millimeters)  
0.406(10.3)  
0.382(9.7)  
0.150(3.8)  
0.366(9.3)  
0.126(3.2)  
0.343(8.7)  
LEAD 1  
0.138(3.5)  
0.098(2.5)  
0.606(15.4)  
0.583(14.8)  
0.197(5.0)  
0.185(4.7)  
*
Patent #’s:  
0.028(0.7)  
0.020(0.5)  
4,980,315  
5,166,769  
5,278,095  
0.016 (0.4) Min.  
0.098(2.5)  
0.059(1.5)  
LEAD 2/METAL HEATSINK  
Features  
Mechanical Data  
Ideally suited for load dump protection  
Case: Molded plastic body, surface mount with heatsink  
integrally mounted in the encapsulation  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Terminals: Plated, solderable per MIL-STD-750, Method 2026  
Polarity: Heatsink is anode  
High temperature stability due to unique oxide passiva-  
tion and patented PAR® construction  
Integrally molded heatsink provides a very low thermal  
resistance for maximum heat dissipation  
Low leakage current at TJ = 175°C  
Mounting Position: Any  
Weight: 0.091 oz., 2.58 g  
Packaging codes/options:  
High temperature soldering guaranteed:  
260°C for 10 seconds at terminals  
Meets ISO7637-2 surge spec.  
2D/750 per 13" Reel (16mm Tape),  
anode towards sprocket hole, 4.5K/box  
2E/750 per 13" Reel (16mm Tape),  
cathode towards sprocket hole, 4.5K/box  
Low forward voltage drop  
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)  
C
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with 10/1000µs waveform  
10/10,000µs waveform  
4600  
3600  
PPPM  
W
Steady state power dissipation  
PD  
IPPM  
6.0  
See Table 1  
600  
W
A
Peak pulse current with a 10/1000µs waveform (NOTE 1)  
Peak forward surge current, 8.3ms single half sine-wave  
Typical thermal resistance junction to case  
IFSM  
A
RΘJC  
TJ, TSTG  
0.95  
°C/W  
°C  
Operating junction and storage temperature range  
–55 to +175  
Notes: (1) Non-repetitive current pulse derated above TA=25°C  
Document Number 88384  
01-Aug-02  
www.vishay.com  
1

与SM6S26A2E相关器件

型号 品牌 描述 获取价格 数据表
SM6S26A-AL JJM 车规瞬态电压抑制二极管

获取价格

SM6S26A-AU PANJIT DO-218AB

获取价格

SM6S26AE SOCAY 4600WTransient Voltage Suppressor (TVS)

获取价格

SM6S26A-E3/2D VISHAY Trans Voltage Suppressor Diode, 4600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-

获取价格

SM6S26AHE3_A/I VISHAY TVS DIODE 26V 42.1V DO218AB

获取价格

SM6S26AT VISHAY Surface Mount PAR® Transient Voltage Suppres

获取价格