SM5010 s eries
5010CL× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.2
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 2.7 V, I = 8 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7 V, I = 8 mA
0.4
10
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V = V
–
–
10
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
0.7V
V
V
IH
DD
V
0.3V
DD
IL
5010CL1
5010CL2
5010CL3
5010CL4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 15 pF, f = 30 MHz
L
R
R
–
–
100
TBD
200
–
–
kΩ
UP 1
UP 2
INH pull-up resistance
Feedback resistance
Built-in capacitance
Measurement cct 4
Measurement cct 5
M
Ω
R
f
kΩ
C
pF
pF
G
D
Design value, determined by the internal wafer pattern
TBD
C
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
4.0
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 4.5 V, I = 16 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5 V, I = 16 mA
0.4
10
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V = V
–
–
10
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
0.7V
V
V
IH
DD
V
0.3V
DD
IL
5010CL1
5010CL2
5010CL3
5010CL4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 50 pF, f = 30 MHz
L
R
R
–
–
100
TBD
200
–
–
kΩ
UP 1
UP 2
INH pull-up resistance
Feedback resistance
Built-in capacitance
Measurement cct 4
Measurement cct 5
M
Ω
R
f
kΩ
C
pF
pF
G
D
Design value, determined by the internal wafer pattern
TBD
C
NIPPON PRECISION CIRCUITS—7