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SM5010CL4S PDF预览

SM5010CL4S

更新时间: 2024-01-23 02:09:12
品牌 Logo 应用领域
NPC 振荡器晶体振荡器
页数 文件大小 规格书
14页 157K
描述
Crystal Oscillator Module ICs

SM5010CL4S 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOP8,.25Reach Compliance Code:unknown
风险等级:5.65JESD-609代码:e0
安装特点:SURFACE MOUNT端子数量:8
标称工作频率:30 MHz最高工作温度:85 °C
最低工作温度:-40 °C最大输出低电流:16 mA
封装主体材料:PLASTIC/EPOXY封装等效代码:SOP8,.25
电源:3/5 V认证状态:Not Qualified
子类别:Other Oscillators最大压摆率:10 mA
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SM5010CL4S 数据手册

 浏览型号SM5010CL4S的Datasheet PDF文件第4页浏览型号SM5010CL4S的Datasheet PDF文件第5页浏览型号SM5010CL4S的Datasheet PDF文件第6页浏览型号SM5010CL4S的Datasheet PDF文件第8页浏览型号SM5010CL4S的Datasheet PDF文件第9页浏览型号SM5010CL4S的Datasheet PDF文件第10页 
SM5010 s eries  
5010CL× series  
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = 20 to 80 °C unless otherwise noted.  
DD  
SS  
Rating  
typ  
2.4  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
2.2  
ma x  
HIGH-level output voltage  
LOW -level output voltage  
V
Q: Measurement cct 1, V = 2.7 V, I = 8 mA  
V
V
OH  
DD  
OH  
V
Q: Measurement cct 2, V = 2.7 V, I = 8 mA  
0.4  
10  
OL  
DD  
OL  
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V  
= V  
DD  
OH  
DD  
Output leakage current  
I
µA  
Z
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V = V  
10  
DD  
OL  
S S  
HIGH-level input voltage  
LOW -level input voltage  
V
INH  
INH  
0.7V  
V
V
IH  
DD  
V
0.3V  
DD  
IL  
5010CL1  
5010CL2  
5010CL3  
5010CL4  
Measurement cct 3, load cct 2,  
Current consumption  
I
mA  
TBD  
DD  
INH = open, C = 15 pF, f = 30 MHz  
L
R
R
100  
TBD  
200  
kΩ  
UP 1  
UP 2  
INH pull-up resistance  
Feedback resistance  
Built-in capacitance  
Measurement cct 4  
Measurement cct 5  
M
R
f
kΩ  
C
pF  
pF  
G
D
Design value, determined by the internal wafer pattern  
TBD  
C
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = 40 to 85 °C unless otherwise noted.  
DD  
SS  
Rating  
typ  
4.2  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
4.0  
ma x  
HIGH-level output voltage  
LOW -level output voltage  
V
Q: Measurement cct 1, V = 4.5 V, I = 16 mA  
V
V
OH  
DD  
OH  
V
Q: Measurement cct 2, V = 4.5 V, I = 16 mA  
0.4  
10  
OL  
DD  
OL  
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V  
= V  
DD  
OH  
DD  
Output leakage current  
I
µA  
Z
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V = V  
10  
DD  
OL  
S S  
HIGH-level input voltage  
LOW -level input voltage  
V
INH  
INH  
0.7V  
V
V
IH  
DD  
V
0.3V  
DD  
IL  
5010CL1  
5010CL2  
5010CL3  
5010CL4  
Measurement cct 3, load cct 2,  
Current consumption  
I
mA  
TBD  
DD  
INH = open, C = 50 pF, f = 30 MHz  
L
R
R
100  
TBD  
200  
kΩ  
UP 1  
UP 2  
INH pull-up resistance  
Feedback resistance  
Built-in capacitance  
Measurement cct 4  
Measurement cct 5  
M
R
f
kΩ  
C
pF  
pF  
G
D
Design value, determined by the internal wafer pattern  
TBD  
C
NIPPON PRECISION CIRCUITS—7  

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