Datasheet > SM12808DT-6.6

SM12808DT-6.6

更新时间： 2024-01-07 01:21:13

品牌	Logo	应用领域
铁电 - RAMTRON		动态存储器内存集成电路
页数	文件大小	规格书
12页	153K
描述
Synchronous DRAM Module, 32MX64, 4.5ns, CMOS, DIMM-168

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中文翻译

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技术参数
数据手册

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SM12808DT-6.6 技术参数

是否无铅：	含铅	生命周期：	Obsolete
零件包装代码：	DIMM	包装说明：	DIMM,
针数：	168	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.36
风险等级：	5.75	访问模式：	DUAL BANK PAGE BURST
最长访问时间：	4.5 ns	其他特性：	AUTO/SELF REFRESH
I/O 类型：	COMMON	JESD-30 代码：	R-XDMA-N168
内存密度：	2147483648 bit	内存集成电路类型：	SYNCHRONOUS DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	168
字数：	33554432 words	字数代码：	32000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	32MX64
输出特性：	3-STATE	封装主体材料：	UNSPECIFIED
封装代码：	DIMM	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	认证状态：	Not Qualified
刷新周期：	4096	自我刷新：	YES
子类别：	DRAMs	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子位置：	DUAL	Base Number Matches：	1

SM12808DT-6.6 数据手册

CAS2/150MHz HSDRAM

64MB, 128MB DIMM

Preliminary Data Sheet

Pin Descriptions

Symbol

CK0,1,2,3

CKE0,1

Type

Input

Function

Clocks: All SDRAM input signals are sampled on the positive edge of CK.

Clock Enables: CKE activate (high) or deactivate (low) the CK signals. Deactivating the clock initiates the

Power-Down and Self-Refresh operations (all banks idle), or Clock Suspend operation. CKE is synchronous until

the device enters Power-Down and Self-Refresh modes where it is asynchronous until the mode is exited.

S0,1,2,3#

Input

Chip Select: S# enables (low) or disables (high) the command decoder. When the command decoder is

disabled, new commands are ignored but previous operations continue.

RAS#, CAS#,

WE#

Command Inputs: Sampled on the rising edge of CK, these inputs define the command to be executed.

Bank Addresses: These inputs define to which of the 4 banks a given command is being applied.

BA1, BA0

A0-A11

Input

Address Inputs: A0-A11 define the row address during the Bank Activate command. A0-A8 define the column

address during Read and Write commands. A10/AP invokes the Auto-precharge operation. During manual

Precharge commands, A10/AP low specifies a single bank precharge while A10/AP high precharges all banks.

The address inputs are also used to program the Mode Register.

DQ0-DQ63

Input/

Output

Data I/O: Data bus inputs and outputs. For Write cycles, input data is applied to these pins and must be set-up

and held relative to the rising edge of clock. For Read cycles, the device drives output data on these pins after

the CAS latency is satisfied.

DQMB0-7

CB0-7

Input

Data I/O Mask Inputs: DQMB0-7 inputs mask write data (zero latency) and acts as a synchronous output enable

(2-cycle latency) for read data.

Input/

Output

Supply

ECC Check Bits

V_DD

V_SS

Power Supply: +3.3 V

Ground

Supply

SDA

Input/

Output

Serial Presence-Detect Data: SDA is a bi-directional pin used to transfer addresses and data into

and data out of the presence-detect portion of the module.

SCL

Input

Serial Clock for Presence-Detect: SCL is used to synchronize the presence detect data transfer to

and from the module

SA0-2

Input

Presence-Detect Address Inputs: These pins are used to configure the presence detect device.

Serial Presence Detect Write Protect: Active high inhibits writes to the SPD EEPROM. WP must be driven low

for normal read/write operations.

RFU

DNU

Reserved for Future Use: These pins should be left unconnected.

Do not use.

No connect - open pin.

Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921

PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com

The information contained herein is subject to change without notice.

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与SM12808DT-6.6相关器件

型号	品牌	获取价格	描述	数据表
SM12808DT-7.5	RAMTRON	获取价格	Synchronous DRAM Module, 16MX64, 4.6ns, CMOS, PDMA168,
SM12809ALDT-7.5	RAMTRON	获取价格	Synchronous DRAM Module, 16MX72, 5.4ns, CMOS, DIMM-168
SM12809DT-6.6	CYPRESS	获取价格	Synchronous DRAM Module, 16MX72, CMOS,
SM12809DT-6.6	RAMTRON	获取价格	Synchronous DRAM Module, 32MX72, 4.5ns, CMOS, DIMM-168
SM12809DT-7.5	CYPRESS	获取价格	Synchronous DRAM Module, 16MX72, 4.6ns, CMOS, PDMA168,
SM12A	MIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM12AT1	ONSEMI	获取价格	450W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, PLASTIC, CASE 318-08, SOT-23,
SM12AT1G	ONSEMI	获取价格	450W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-0
SM12B	MCC	获取价格	Tape : 3K/Reel , 120K/Ctn;
SM12BC	BL Galaxy Electrical	获取价格	12V,350W,Surface Mount TVS

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