Datasheet > SLM50N06G

SLM50N06G

更新时间： 2024-06-27 12:13:05

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1011K
描述
DFN5*6

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SLM50N06G 数据手册

SLM50N06G

60V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Shielding Gate MOSFET technology.

- 50A, 60V, R_DS(on)Typ= 8.5mΩ@V_GS= 10 V

- Very Low On-resistance R_DS(ON)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters and high efficiency switching for power

management in portable and battery operated products.

DFN5*6

SLM50N06G

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLM50N06G

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

200

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

P_D

2.4

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.0 Aug. 2022

12 3 4 5 6 7 8

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