Datasheet > SLG55022-200030VTR

SLG55022-200030VTR

更新时间： 2024-01-16 23:56:08

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DIALOG		栅
页数	文件大小	规格书
9页	256K
描述
GreenFETTM High Voltage Gate Driver

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SLG55022-200030VTR 数据手册

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SLG55022-200030

GreenFET High Voltage Gate Driver

Absolute Maximum Ratings

Parameter

Min.

-0.3

-1.0

-65

Max.

40.0

6.5

Unit

V_Dor V_Sto GND

Voltage at Logic Input pins

Current at input pin

1.0

°C

Storage temperature range

Junction temperature

ESD Human Body Model

ESD Machine Model

Moisture Sensitivity Level

150

2000

200

Electrical Characteristics

T_A= -10 °C to 75 °C

Parameter Description

Conditions

Min.

11.5

0.25

Typ.

12.0

Max.

12.5

Unit

V_CC

Supply Voltage

T_{VCC_RAMP}V_CCRamp-up Rate

See Note 1

V/ms

V_Gnot ramping

FET = ON

A

I_q

Quiescent Current

V_Gnot ramping

FET = OFF

0.1

V_D

V_GS

FET Drain Voltage

1.0

8.0

500

11.5

Gate-Source Voltage

FET Gate Capacitance

Ramp Delay Range

FET Turn on Slew Rate

C_G

8000

750

2.8

T_DELAY

T_SLEW

1.5ms Default, 500s step

500

2.0

s

1.2

V/ms

Nominal discharge time of ~100ms

10mA max rate

I_DISCHARGEInternal Discharge Resistor

180

300

420



V_IH

V_IL

HIGH-level input voltage

LOW-level Input voltage

HIGH-level output voltage

ON (200mV Hysteresis)

PG Open Drain

2.4

5.5

0.4

5.5

V_OH

I_{OL_LOGIC}Logic LOW level output

PG Sink Current

V_IH= 3.3V

A

I_IH

HIGH-level input current

<1.0

Notes:

1. If T_{VCC_RAMP}> 5V/ms and ON is asserted, Gate charging will begin after 1ms.

Datasheet

10-Jul-2018

Revision 1.03

Page 3 of 9

CFR0011-120-01

1 234 5 6 7...9

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