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SLD2083CZ

更新时间： 2024-01-29 20:05:57
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
5页 130K
描述
10 Watt high performance LDMOS transistor designed for operation to 2700MHz

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中文翻译

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SLD2083CZ 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-CDSO-G2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Is Samacsys：N
配置：SINGLE最小漏源击穿电压：35 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDSO-G2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：90 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

SLD2083CZ 数据手册

 浏览型号SLD2083CZ的Datasheet PDF文件第2页浏览型号SLD2083CZ的Datasheet PDF文件第3页浏览型号SLD2083CZ的Datasheet PDF文件第4页浏览型号SLD2083CZ的Datasheet PDF文件第5页 
Preliminary  
RoHS Compliant  
& Green Package  
Product Description  
Pb  
SLD2083CZ  
The SLD2083CZ is a 10 Watt high performance  
LDMOS transistor designed for operation to  
2700MHz. It is an excellent solution for applica-  
tions requiring high linearity and efficiency at a  
low cost. The SLD2083CZ is typically used in  
the design of driver stages for power amplifiers,  
repeaters, and RFID applications. The power  
transistor is fabricated using Sirenza’s high per-  
10 Watt Discrete LDMOS Device  
Ceramic Package  
TM  
formance XeMOS II process.  
Product Features  
• 10 Watt Output P1dB  
Functional Schematic Diagram  
• Single Polarity Supply Voltage  
• High Gain: 18 dB Typical  
• High Efficiency  
ESD  
Protection  
• Advanced, XeMOS II LDMOS  
• Integrated ESD Protection, Class 1A  
Applications  
• Base Station PA driver  
• Repeater  
Case Flange = Ground  
• RFID  
RF Specifications  
Description: Test Conditions in Sirenza Evaluation  
Board = 28.0V, I = 125mA, T = 25ºC  
Parameter  
Unit  
Min  
Typ  
Max  
V
DS  
DQ  
Flange  
Frequency  
Gain  
Frequency of Operation  
MHz  
dB  
-
-
2700  
10 Watt CW, 902MHz-928MHz  
17  
40  
-
18  
-
Efficiency  
IRL  
Drain Efficiency at 10 Watt CW, 915MHz  
%
47  
-
-10  
-26  
-
Input Return Loss, 10 Watt Output Power, 915MHz  
rd  
dB  
-15  
-28  
11  
3
Order IMD at 10 Watt PEP (Two Tone), 915MHz  
dBc  
Watt  
Watt  
Watt  
-
1dB Compression (P ), 915MHz  
1dB  
10  
1.8  
3.2  
Linearity  
ACPR=-55dB, IS-95  
ACPR=-45dB, IS-95  
1.6  
3.6  
-
-
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.  
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product  
for use in life-support devices and/or systems.  
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 S. Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103754 Rev D  
12345

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