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SLD20P10T PDF预览

SLD20P10T

更新时间: 2024-06-27 12:11:34
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
6页 848K
描述
TO-252

SLD20P10T 数据手册

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LEAD FREE  
RoHS  
SLD20P10T/SLP20P10T  
100V P -Channel MOSFET  
Features  
General Description  
- N-Channel:-100V -20A  
This Power MOSFET is produced using Maple semi‘s  
advanced planar stripe TRENCH technology.  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
RDS(on)Typ= 59mΩ@VGS = 10 V  
- Very Low On-resistance RDS(ON)  
- LowCrss  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
Application  
Load Switch  
PWM Application  
Power Management  
D
D
G
D-PAK  
TO-220C  
G
S
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLD20P10T/SLP20P10T  
Units  
V
Drain-Source Voltage  
-100  
-20  
-17  
-80  
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
ID  
- Continuous (TC = 100)  
A
(Note 1)  
IDM  
VGSS  
EAS  
Drain Current  
- Pulsed  
A
Gate-Source Voltage  
20  
±
V
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
42  
mJ  
102  
PD  
W
Power Dissipation (TC = 100)  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to ambient  
Operating and Storage Temperature Range  
-
1.22  
R θJC  
R θJA  
/W  
/W  
91  
TJ, TSTG  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Maple semiconductor Co., Ltd  
http://www.maplesemi.com  
Rev1.0 Apr. 2020  

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