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SLD120N06T

更新时间: 2024-09-22 18:09:47
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 1098K
描述
TO-252

SLD120N06T 数据手册

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SLD120N06T  
60V N-Channel MOSFET  
General Description  
Features  
- N-Channel:60V 120A  
This Power MOSFET is produced using Msemitek‘s  
advanced TRENCH technology.  
, RDS(on)Typ = 4.2mΩ@VGS = 10 V  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast Switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored  
to minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
Application  
PWM Application  
Load Switch  
Power Management  
D
G
D-PAK  
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLD120N06T  
Units  
V
Drain-Source Voltage  
60  
120  
78  
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
ID  
- Continuous (TC = 100)  
A
(Note 1)  
(Note 2)  
IDM  
VGSS  
EAS  
PD  
Drain Current  
- Pulsed  
360  
A
Gate-Source Voltage  
20  
±
V
Single Pulsed Avalanche Energy  
500  
100  
mJ  
W
Power Dissipation (TC = 25)  
R θJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
1.25  
W/℃  
-55 to +150  
TL  
300  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev. 2.0 Sep. 2022  

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