Datasheet > SLB65R280E7

SLB65R280E7

更新时间： 2024-09-30 18:09:55

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
7页	978K
描述
TO-263

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SLB65R280E7 数据手册

SLB65R280E7

N-Channel Power MOSFET

Features

General Description

This Power MOSFET is produced using Msemitek‘s

Advanced Super-Junction technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 15A, 650V, R_DS(on)typ= 0.28Ω@V_GS= 10 V

- Low gate charge ( typical 19.6nC)

- Lower Gate Resistance

- 100% Avalanche Tested

- Pb-free and RoHS Compliant

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB65R280E7

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

37.5

Gate-Source Voltage

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

710

3.0

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

1.11

V/ns

(Note 3)

dv/dt

P_D

100

Power Dissipation (T_C= 25℃)

W/℃

℃

- Derate above 25℃

0.24

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLB65R280E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

4.1

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.1 Sep. 2021

12 3 4 5 6 7

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