5秒后页面跳转
SL23HE3/5BT PDF预览

SL23HE3/5BT

更新时间: 2024-09-21 06:11:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管瞄准线功效
页数 文件大小 规格书
4页 337K
描述
Surface Mount Schottky Barrier Rectifier

SL23HE3/5BT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.28 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SL23HE3/5BT 数据手册

 浏览型号SL23HE3/5BT的Datasheet PDF文件第2页浏览型号SL23HE3/5BT的Datasheet PDF文件第3页浏览型号SL23HE3/5BT的Datasheet PDF文件第4页 
SL22 & SL23  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AA (SMB)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
20 V to 30 V  
100 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
VF  
0.32 V  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
125 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SL22  
SL2  
20  
SL23  
SL3  
30  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
14  
21  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (Fig.1)  
20  
30  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 55 to + 125  
- 55 to + 150  
TSTG  
°C  
Document Number: 88741  
Revision: 22-Jan-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SL23HE3/5BT 替代型号

型号 品牌 替代类型 描述 数据表
SL23HE3_A/I VISHAY

功能相似

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, DO-214AA, SMB, 2 P

与SL23HE3/5BT相关器件

型号 品牌 获取价格 描述 数据表
SL23-HE3/5BT VISHAY

获取价格

DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN,
SL23HE3_A/I VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, DO-214AA, SMB, 2 P
SL23-L FORMOSA

获取价格

Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL23M WEITRON

获取价格

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V
SL23-M FORMOSA

获取价格

Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL23-MH FORMOSA

获取价格

Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL23-M-H WEITRON

获取价格

Rectifier Diode,
SL23N0 MOLEX

获取价格

Telecom and Datacom Connector, 23 Contact(s), Male, Solder Terminal
SL23N1 MOLEX

获取价格

Telecom and Datacom Connector, 23 Contact(s), Male, Solder Terminal
SL23N3 MOLEX

获取价格

Telecom and Datacom Connector, 23 Contact(s), Male, Solder Terminal