Datasheet > SKR6

SKR6

更新时间： 2024-10-02 09:24:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		二极管
页数	文件大小	规格书
2页	160K
描述
DIODE

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中文翻译

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数据手册

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SKR6 数据手册

SKR 6,2 Qu bond

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.05 mA

T_s= 80 °C, T_j= 150 °C

T_j= 150 °C, 10 ms, sin 180°

V_RRM

I_F(AV)

i²t

1600

A²s

1800

850

600

150

T_j= 25 °C

10 ms

I_FSM

sin 180°

T_j= 150 °C

T_jmax

°C

DIODE

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_F(DC)= 65 A

T_j= 25 °C, V_RRM

I_R

0.05

1.1

V_RRM= 1600 V

T_j= 145 °C, V_RRM

T_j= 25 °C, I_F= 33 A

Size: 6,2 mm x 6,2 mm

V_F

1.21

1.1

T_j= 125 °C, I_F= 33 A

T_j= 125 °C

0.9

V_(TO)

r_T

0.83

4.9

T_j= 125 °C

mΩ

µs

SKR 6,2 Qu bond

Features

• high current density due to mesa

technology

T_j= 25 °C, ± 1 A

t_rr

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

150

250

320

°C

• high surge current

• compatible to thick wire bonding

• compatible to all standard solder

processes

T_stg

T_solder

10 min.

5 min.

Typical Applications*

• uncontrolled rectifier bridges

soldered on 0,38 mm DCB, reference

point on copper heatsink close to the

chip

R_th(j-s)

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

6.2 x 6.2

mm²

Area total

Anode

38.44

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

wafer frame

Chips /

Package

378

pcs

SKR

Rev. 1 – 19.02.2010

中文翻译

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