Datasheet > SK55B-LT-T

SK55B-LT-T

更新时间： 2024-01-20 16:10:32

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	82K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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SK55B-LT-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.56	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SK55B-LT-T 数据手册

SK52B-LT

THRU

SK510B-LT

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

5 Amp Schottky

Rectifier

20 to 100 Volts

•

High Current Capability

For Surface Mount Applications

Higher Temp Soldering : 260 for 10 Seconds At Terminals

°C

Available on Tape and Reel

DO-214AA

(SMB) (LEAD FRAME)

Maximum Ratings

•

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Maximum Thermal Resistance; 16^OC/W Junction To Lead

55°C/W Junction To Ambient

•

MCC

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

20V

SK52B-LT SK52B

SK53B-LT SK53B

SK54B-LT SK54B

SK55B-LT SK55B

SK56B-LT SK56B

SK58B-LT SK58B

SK510B-LT SK510B

14V

21V

28V

35V

42V

56V

70V

30V

40V

50V

60V

80V

100V

30V

40V

50V

60V

80V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIMENSIONS

Average Forward

Current

I_F(AV)

5.0A

T_A= 120°C

INCHES

MIN

DIM

MAX

.185

.155

.012

.060

.220

.096

.087

.008

MAX

4.70

3.94

0.31

1..52

5.59

2.44

2.21

0.203

NOTE

.160

.130

.006

.030

.200

.079

.075

.002

4.06

3.30

0.15

0.76

5.08

2.00

1.91

0.05

Peak Forward Surge

Current

I_FSM

100A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

V_F

.55V

.75V

.85V

I_FM= 5.0A;

T_J= 25°C

SK52B-LT~54B-LT

SK55B-LT~56B-LT

SK58B-LT~510B-LT

SUGGESTED SOLDER

PAD LAYOUT

0.106"

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

1.0mA

20mA

T_J= 25°C

T_J= 100°C

0.083”

Typical Junction

Capacitance

C_J

200pF

Measured at

1.0MHz, V_R=4.0V

0.050”

*Pulse test: Pulse width 200 µsec, Duty cycle 2%

www.mccsemi.com

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Revision: 1

2006/06/15

12 3 4

中文翻译

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