SK52AF - SK510AF
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 5.0 A
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
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B
C
!
Plastic Case Material has UL Flammability
E
Mechanical Data
SMAF
Dim Min Max Typ
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Case: SMAF,Molded Plastic
D
A
B
C
D
E
H
L
4.75 4.85
3.68 3.72
4.80
3.70
2.60
1.00
Terminals: Solder Plated, Solderable
H
per MIL-STD-750, Method 2026
Polarity:Color band denotes cathode end
Mounting Position:Any
2.57
2.63
L
0.097 1.03
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1.38 1.42 1.40
0.13 0.17 0.15
0.63 0.67 0.65
E
Weight:0.0018 ounce, 0.064 grams
All Dimensions in mm
A
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SK58AF SK510AF
SK52AF SK53AF SK54AF SK55AF SK56AF
Unit
Symbol
Characteristic
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
RRM
RMS
V
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
V
DC
I
(AV)
5.0
A
A
Peak forward surge current
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
V
F
0.55
0.70
0.85
Maximum instantaneous forward voltage at 5.0A
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
IR
TA=100 C
20
10
200
pF
C/W
C
Typical junction capacitance (NOTE 1)
C
J
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +125
-65 to +150
-65 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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