Datasheet > SK20KDD12SCp

SK20KDD12SCp

更新时间： 2023-12-06 20:00:44

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	214K
描述
SiC Modules SEMITOP 2 Press-Fit (28x40.5x12)

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SK20KDD12SCp 数据手册

SK20KDD12SCp

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_Fnom

I_FSM

i²t

A²s

°C

8.3 ms, sin 180°,

8.3 ms, sin 180°, T_j= 150 °C

SEMITOP^®2 Press-Fit

T_j

-40 ... 175

Absolute Maximum Ratings

SiC Bridge Rectifier

Symbol Conditions

Module

Values

Unit

Engineering Sample

SK20KDD12SCp

Target Data

I_t(RMS)

T_stg

T_terminal= 100 °C, T_S= 60°C, per pin

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

Features

• 1200V SiC Schottky diodes

• High frequency rectifier

Characteristics

Symbol Conditions

Diode 1

min.

typ.

max.

Unit

• Smart pinout to ease parallel or series

modules connection

• Compact design

I_F= 10 A

T_j= 25 °C

V_F

1.40

1.80

1.60

2.10

• One screw mounting module

• Fully compatible with other SEMITOP^®

Press-Fit types

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

0.95

0.80

100

0.042

1.05

0.90

mΩ

chiplevel

• Improved thermal performance by

aluminum oxide substrate

• Ultra Low inductance design

• UL recognized, file no. E63532

r_F

chiplevel

120

V_R= 800 V, f = 1 MHz, T_j= 25 °C

V_R= 800 V, di/dt_off= 500 A/µs,

T_j= 25 °C

C_j

Typical Applications*

Q_c

0.034

2.65

µC

• Solar inverter

• UPS

R_th(j-s)

per Diode

K/W

• Power Supply

Characteristics

Symbol Conditions

Module

min.

typ.

max.

Unit

M_s

to heatsink

weight

1.8

KDD

Rev. 0.2 – 15.01.2018

12 3

中文翻译

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