SiT8008B
Low Power Programmable Oscillator
Features
Applications
◼ Any frequency between 1 MHz and 110 MHz accurate to
6 decimal places
◼ Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
◼ 100% pin-to-pin drop-in replacement to quartz-based XO
◼ Excellent total frequency stability as low as ±20 ppm
◼ Operating temperature from -40°C to 85°C. For 125°C
and/or -55°C options, refer to SiT1618, SiT8918, SiT8920
◼ Low power consumption of 3.5 mA typical at 1.8 V
◼ Qualify just one device with 1.62 V to 3.63 V continuous
supply voltage option
◼ Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
◼ Standby mode for longer battery life
◼ Fast startup time of 5 ms
◼ LVCMOS/HCMOS compatible output
◼ Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
◼ Instant samples with Time Machine II and Field
Programmable Oscillators
◼ RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
◼ For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Frequency Range
110 MHz
Frequency Stability and Aging
Unit
Condition
Output Frequency Range
f
1
–
Frequency Stability
F_stab
T_use
-20
-25
-50
–
–
–
+20
+25
+50
ppm
ppm
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage
and load.
Operating Temperature Range
Operating Temperature
Range
-20
-40
–
–
+70
+85
°C
°C
Extended Commercial
Industrial
Supply Voltage and Current Consumption
Supply Voltage Options
Vdd_1.8
Vdd_2.5
Vdd_2.8
Vdd_3.0
Vdd_3.3
Vdd_XX
Vdd_YY
Idd
Contact SiTime for 1.5 V support
1.62
2.25
2.52
2.7
1.8
2.5
2.8
3.0
3.3
1.98
2.75
3.08
3.3
V
V
V
V
V
2.97
3.63
2.25
1.62
–
–
3.63
3.63
V
V
Current Consumption
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3,
Vdd_XX, Vdd_YY
–
–
–
3.7
3.5
–
4.2
4.1
4.2
mA
mA
mA
No load condition, f = 20 MHz, Vdd_2.5
No load condition, f = 20 MHz, Vdd_1.8
OE Disable Current
Standby Current
I_OD
I_std
Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.
OE = GND, Output in high-Z state
–
–
–
4.0
4.3
mA
Vdd_1.8. OE = GND, Output in high-Z state
2.1
A
ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.
Output is weakly pulled down
–
–
1.1
0.2
2.5
1.3
A
A
ST = GND, Vdd_2.5, Output is weakly pulled down
ST = GND, Vdd_1.8, Output is weakly pulled down
1.07
3 November 2021
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