Datasheet > SiHL640S

SiHL640S

更新时间： 2024-09-25 01:26:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	994K
描述
Repetitive avalanche rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHL640S 数据手册

IRL640S, SiHL640S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Surface mount

V_DS(V)

_DS(on)()

Q_gmax. (nC)

200

• Available in tape and reel

• Dynamic dV/dt rating

V_GS= 5 V

0.18

Available

• Repetitive avalanche rated

• Logic-level gate drive

9.0

• R_DS(on)specified at V_GS= 4 V and 5 V

• Fast switching

_gs(nC)

_gd(nC)

• Material categorization: for definitions of

Configuration

Single

compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



D²PAK (TO-263)



DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHL640S-GE3

IRL640SPbF

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHL640STRL-GE3 ^a

IRL640STRLPbF ^a

SiHL640STL-E3 ^a

SiHL640STRR-GE3 ^a

IRL640STRRPbF ^a

SiHL640STR-E3 ^a

Lead (Pb)-free

SiHL640S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

200

UNIT

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Repetitive Avalanche Current ^a

Repetitive Avalanche Energy ^a

Maximum Power Dissipation

0.025

580

E_AS

I_AR

E_AR

_C= 25 °C

125

P_D

V/ns

°C

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

T_A= 25 °C

3.1

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Temperature ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 3.0 mH, R_g= 25 , I_AS= 17 A (see fig. 12).

c. I_SD 17 A, dI/dt  150 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1” square PCB (FR-4 or G-10 material).

S16-0763-Rev. D, 02-May-16

Document Number: 91306

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiHL640S相关器件

型号	品牌	获取价格	描述	数据表
SIHL640STR-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SIHL640STRL-GE3	VISHAY	获取价格	TRANSISTOR 17 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SIHL640STRR-GE3	VISHAY	获取价格	TRANSISTOR 17 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SIHLD014	VISHAY	获取价格	Power MOSFET
SIHLD014-E3	VISHAY	获取价格	Power MOSFET
SIHLD024	VISHAY	获取价格	Power MOSFET
SIHLD024-E3	VISHAY	获取价格	Power MOSFET
SIHLD110	VISHAY	获取价格	Power MOSFET
SIHLD110-E3	VISHAY	获取价格	Power MOSFET
SIHLD120	VISHAY	获取价格	Power MOSFET

与SiHL640S相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

7
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

13
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

80
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

SiHL640S

SiHL640S 数据手册

与SiHL640S相关器件

与SiHL640S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiHL640S

SiHL640S 数据手册

与SiHL640S相关器件

与SiHL640S相关文章

您还可以找

您在本页遇到什么问题？