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SGL-0363Z

更新时间： 2024-01-10 05:55:50
品牌 Logo 应用领域
SIRENZA 放大器射频微波
页数 文件大小 规格书
9页 291K
描述
5-2000 MHz Low Noise Amplifier Silicon Germanium

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中文翻译

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SGL-0363Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：5A991.G
HTS代码：8542.33.00.01风险等级：5.17
Is Samacsys：N特性阻抗：50 Ω
构造：COMPONENT增益：15 dB
最大输入功率 (CW)：18 dBm最大工作频率：2000 MHz
最小工作频率：5 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND LOW POWER
最大电压驻波比：10Base Number Matches：1

SGL-0363Z 数据手册

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Preliminary  
RoHS Compliant  
& Green Package  
SGL-0363Z  
Pb  
Product Description  
5-2000 MHz Low Noise Amplifier  
Silicon Germanium  
Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is  
designed for 2.7 to 3.3V battery operation. The matching networks are  
implemented externally which allows for optimum narrow-band performance  
with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC  
uses the latest Silicon Germanium HBT process.  
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post  
annealing process to mitigate tin whisker formation and is RoHS compliant per  
EU Directive 2002/95. The package body is manufactured with green molding  
compounds that contain no antimony trioxide or halogenated fire retardants.  
Product Features  
• Lead Free, RoHS Compliant & Green Package  
• Low Power Consumption, 5.7mA @ 3.3V  
• External Input Noise Match  
• High Gain and Low Noise,  
20dB and 1.1dB respectively @ 900MHz  
Simplified Device Schematic  
Vpc  
RF Out  
Narrow-band  
Matching  
• Operates from 2.7 to 3.3V  
Gnd  
Network  
Active Bias  
Network  
• Power Shutdown Capability using VPC  
• 500V ESD, Class 1B  
• Small Package: SOT-363  
• High input overdrive capability, +18dBm  
Narrow-band  
Matching  
Network  
RF In  
Applications  
• Low Power LNA for ISM,  
Cellular and Mobile Communications  
Gnd  
Symbol  
Parameters  
Units  
Frequency  
Min.  
Typ.  
Max.  
200 MHz  
450 MHz  
900 MHz  
21  
20  
20  
S21  
Small Signal Gain  
dB  
17  
23  
200 MHz  
450 MHz  
900 MHz  
1.1  
2.2  
2.5  
P1dB  
IIP3  
NF  
Output Power at 1dB Compression  
Input Third Order Intercept Point  
Noise Figure  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
200 MHz  
450 MHz  
900 MHz  
-3.8  
-2.4  
-7.1  
200 MHz  
450 MHz  
900 MHz  
1.0  
1.1  
1.1  
200 MHz  
450 MHz  
900 MHz  
14  
12  
15  
IRL  
Input Return Loss  
200 MHz  
450 MHz  
900 MHz  
20  
19  
12  
ORL  
S12  
Output Return Loss  
200 MHz  
450 MHz  
900 MHz  
24  
25  
27  
Reverse Isolation  
ID  
Device Operating Current  
mA  
4.8  
5.7  
6.6  
RTH, j-l  
Thermal Resistance (junction - lead)  
°C/W  
173  
Test Conditions:  
VS = 3.3V  
TL = 25°C  
ID = 5.7mA Typ.  
ZS = ZL = 50 Ohms  
IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm  
Different Application Circuit per Band  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104341 Rev D  
1234567...9

中文翻译

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