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SGL0622ZSR PDF预览

SGL0622ZSR

更新时间： 2024-02-23 16:24:38
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
6页 546K
描述
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM

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中文翻译

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SGL0622ZSR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：DFN-8Reach Compliance Code：compliant
ECCN代码：5A991.GHTS代码：8542.33.00.01
风险等级：5.28安装特点：SURFACE MOUNT
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：SOLCC8,.08,20
电源：3.3 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：12.5 mA
表面贴装：YES技术：BIPOLAR

SGL0622ZSR 数据手册

 浏览型号SGL0622ZSR的Datasheet PDF文件第2页浏览型号SGL0622ZSR的Datasheet PDF文件第3页浏览型号SGL0622ZSR的Datasheet PDF文件第4页浏览型号SGL0622ZSR的Datasheet PDF文件第5页浏览型号SGL0622ZSR的Datasheet PDF文件第6页 
SGL0622Z  
SGL0622Z  
5MHz to 4000MHz LOW NOISE MMIC  
AMPLIFIER SILICON GERMANIUM  
Package: QFN, 2x2  
Product Description  
Features  
The SGL0622Z is a low noise, high gain MMIC LNA designed for low power High Gain=28dB at 1575MHz  
single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection  
and high input overdrive capability ensures rugged performance, while its  
integrated active bias circuit maintains robust stable bias over tempera-  
ture and process beta variation. The SGL0622Z is internally matched from  
Low Noise Figure=1.5dB at  
1575MHz  
Low Power Consumption,  
10.5mA @ 3.3V  
5MHz to 4000 MHz and requires only 4 to 5 external biasing components  
(DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated Battery Operation:2.7V to 3.6V  
(Active Biased)  
using highly repeatable Silicon Germanium technology and is housed in a  
cost-effective RoHS/WEEE compliant QFN 2x2 minia-  
Fully Integrated Matching  
Optimum Technology  
ture package.  
Matching® Applied  
Class-1C ESD Protection  
(>1000V HBM)  
Typical Performance  
GaAs HBT  
4.00  
40.0  
GaAs MESFET  
High input overdrive capability,  
+18dBm  
3.50  
35.0  
InGaP HBT  
Gain  
3.00  
30.0  
SiGe BiCMOS  
Applications  
High Gain GPS Receivers  
ISM and WiMAX LNAs  
2.50  
25.0  
Si BiCMOS  
2.00  
20.0  
SiGe HBT  
1.50  
15.0  
GaAs pHEMT  
NF  
1.00  
10.0  
Si CMOS  
0.50  
5.0  
Si BJT  
0.00  
0.0  
GaN HEMT  
100.0  
600.0  
1100.0 1600.0 2100.0 2600.0 3100.0  
Frequency (MHz)  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
25.0  
Typ.  
28.0  
23.0  
16.5  
5.3  
Max.  
31.0  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
1.575GHz  
2.44GHz  
3.50GHz  
1.575GHz  
2.44GHz  
3.50GHz  
1.575GHz  
2.44GHz  
3.50GHz  
1.575GHz  
2.44GHz  
3.50GHz  
1.575GHz  
2.44GHz  
3.50GHz  
1.575GHz  
2.44GHz  
14.5  
3.3  
18.5  
Output Power at 1dB Compression  
Input Third Order Intercept Point  
Input Return Loss  
1.5  
-1.4  
-16.0  
12.0  
6.0  
-13.0  
-12.0  
-8.5  
14.0  
12.0  
10.0  
9.5  
14.0  
22.0  
1.5  
Output Return Loss  
Noise Figure  
1.9  
2.0  
2.8  
dB  
3.50GHz  
Reverse Isolation  
Thermal Resistance  
Device Operating Current  
-28.0  
150  
10.5  
dB  
°C/W  
mA  
0.05GHz to 4.0GHz  
junction - lead  
7.5  
14.5  
Test Conditions: VCC=3.3V, ID=10.5mA Typ., IIP3 Tone Spacing=1MHz, POUT per tone=-15dBm, TL=25°C, ZS=ZL=50  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS140404  
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