SG20N12T, SG20N12DT
Discrete IGBTs
(T
J
=25o
C, unless otherwise specified)
Characteristic Values
Symbol
Test Conditions
Unit
min.
12
typ.
max.
gts
I
C=IC90; VCE=10V
16
S
Pulse test, t 300us, duty cycle 2%
C
ies
1750
90
C
oes
V
CE=25V; VGE=0V; f=1MHz
pF
nC
C
res
31
Q
g
ge
gc
63
Q
Q
I
C=IC90; VGE=15V; VCE=0.5VCES
13
26
t
d(on)
ri
d(off)
fi
off
d(on)
ri
Inductive load, T
J
=25o
C
28
ns
ns
L=100uH;
t
I
C=IC90; VGE=15V;
20
V
CE=0.8VCES'; R
G
=Roff=47
t
400
380
6.5
30
800
700
10.5
ns
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher T or
increased R
t
ns
J
E
G
mJ
ns
t
Inductive load, T
=IC90; VGE=15V; L=100uH;
CE=0.8VCES'; R =Roff=47
J
=125o
C
t
I
C
27
ns
E
on
V
G
0.90
700
550
9.5
mJ
ns
t
d(off)
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher T or
increased R
t
fi
J
ns
E
off
G
mJ
K/W
K/W
R
thJC
0.83
R
thCK
0.25
(T
J
=25o
C, unless otherwise specified)
Reverse Diode (FRED)
Symbol
Characteristic Values
Test Conditions
Unit
min.
typ.
max.
V
F
I
F
=12A; TVJ=150o
VJ=25o
C
1.87
2.15
V
T
C
I
RM
V
L
R
=540V; I
F
=20A; -di
F
/dt=100A/us
7
A
0.05uH; TVJ=100o
C
t
rr
I
F=1A; -di/dt=100A/us; V
R
=30V; TVJ=25o
C
40
ns
60
R
thJC
1.6
K/W