Datasheet > SG12N06P

SG12N06P

更新时间： 2022-04-06 15:34:06

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	198K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG12N06P 数据手册

SG12N06P, SG12N06DP

Discrete IGBTs

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

G=Gate, C=Collector, E=Emitter

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

SG12N06DP

Test Conditions

SG12N06P

Symbol

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=33

ICM=24

@ 0.8 VCES

SSOA

(RBSOA)

Clamped inductive load, L=300uH

TC=25^oC

100

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4

0.55/5

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

200

1.5

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V

±100

2.1

CE(sat)

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