Datasheet > SFF100N20/3TTXV

SFF100N20/3TTXV

更新时间： 2024-02-13 18:55:24

品牌	Logo	应用领域
SSDI		局域网开关晶体管
页数	文件大小	规格书
2页	139K
描述
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-2

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技术参数
数据手册

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SFF100N20/3TTXV 技术参数

生命周期：	Active	零件包装代码：	TO-204AA
包装说明：	FLANGE MOUNT, O-MBFM-P2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.69	Is Samacsys：	N
雪崩能效等级（Eas）：	1500 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V	最大漏极电流 (ID)：	55 A
最大漏源导通电阻：	0.03 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-3	JESD-30 代码：	O-MBFM-P2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SFF100N20/3TTXV 数据手册

SFF100N20/3T

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

100 AMP , 200 Volts, 25 mΩ

Avalanche Rated N-channel

MOSFET

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF100N20 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:



Rugged poly-Si gate

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Power Package with high pin

current carrying capability



Lead Option

__ = Straight Leads

Package

/3T= TO-3 (Pin Diameter : 0.058”-0.063”)



Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Maximum Ratings^5/

Symbol

V_DSS

Value

Units

Drain - Source Voltage

200

±20

±30

continuous

transient

Gate – Source Voltage

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25ºC

@ T_C= 125ºC

I_D2

I_D3

100

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

@ L= 0.1 mH

@ T_C= 25ºC

I_AR

E_AS

E_AR

1500

Single and Repetitive Avalanche Energy

Total Power Dissipation

300

P_D

Operating & Storage Temperature

-55 to +175

ºC

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

R_θJC

0.5 (typ.0.3)

ºC/W

NOTES:

TO-3

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0044A

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