5秒后页面跳转
SF30FG PDF预览

SF30FG

更新时间: 2024-09-30 20:18:15
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 47K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD,

SF30FG 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.38
Is Samacsys:N其他特性:HIGH CURRENT CAPABILITY, UL FLAMMABILITY
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-LALF-W2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.04 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SF30FG 数据手册

 浏览型号SF30FG的Datasheet PDF文件第2页浏览型号SF30FG的Datasheet PDF文件第3页浏览型号SF30FG的Datasheet PDF文件第4页 
SF30AG–SF30JG  
Vishay Lite–On Power Semiconductor  
3.0A Super–Fast Glass Passivated Rectifiers  
Features  
Glass passivated die construction  
Diffused junction  
Super–fast switching for high efficiency  
High current capability and low forward voltage  
drop  
Surge overload rating to 150A peak  
Low reverse leakage current  
14 423  
Plastic material – UL Recognition flammability  
classification 94V–0  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
V
V
V
V
V
V
V
V
Repetitive peak reverse voltage  
=Working peak reverse voltage  
=DC Blocking voltage  
SF30AG  
SF30BG  
SF30CG  
SF30DG  
SF30FG  
SF30GG  
SF30HG  
SF30JG  
V
RRM  
=V  
100  
150  
200  
300  
400  
500  
600  
150  
3
RWM  
=V  
R
Peak forward surge current  
Average forward current  
I
A
A
FSM  
T =55 C  
A
I
FAV  
Junction and storage temperature range  
T =T  
–65...+150  
C
j
stg  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
I =3A  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
SF30AG–DG  
SF30FG–GG  
SF30HG–JG  
V
F
V
F
V
F
0.95  
1.3  
1.5  
10  
V
V
V
F
T =25 C  
I
I
A
A
R
T =100 C  
A
100  
35  
A
ns  
R
Reverse recovery time I =1A, I =0.5A,  
SF30AG–DG  
SF30FG–GG  
SF30HG–JG  
SF30AG–GG  
SF30HG–JG  
t
rr  
t
rr  
t
rr  
F
R
I =0.25A  
rr  
40  
ns  
50  
ns  
Diode capacitance  
V =4V, f=1MHz  
R
C
C
75  
50  
32  
pF  
pF  
K/W  
D
D
Thermal resistance  
junction to ambient  
R
thJA  
Rev. A2, 24-Jun-98  
1 (4)  

与SF30FG相关器件

型号 品牌 获取价格 描述 数据表
SF30FG-B DIODES

获取价格

3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
SF30FG-T DIODES

获取价格

3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
SF30G13 TOSHIBA

获取价格

Silicon Controlled Rectifier, 47 A, 400 V, SCR
SF30G2H1 TOSHIBA

获取价格

Silicon Controlled Rectifier, 400 V, SCR
SF30G4B1 TOSHIBA

获取价格

Silicon Controlled Rectifier, 400 V, SCR
SF30GG VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
SF30GG DIODES

获取价格

3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
SF30GG TAYCHIPST

获取价格

SUPER-FAST GLASS PASSIVATED RECTIFIER
SF30GG(LS) DIODES

获取价格

3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
SF30GG-B DIODES

获取价格

3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER