Datasheet > SES900

SES900

更新时间： 2024-09-25 09:29:11

品牌	Logo	应用领域
恩智浦 - NXP		传感器温度传感器光电二极管双倍数据速率
页数	文件大小	规格书
55页	413K
描述
DDR memory module temp sensor with integrated SPD, 3.3 V

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SES900 数据手册

SE97

DDR memory module temp sensor with integrated SPD, 3.3 V

Rev. 07 — 29 January 2010

Product data sheet

1. General description

The NXP Semiconductors SE97 measures temperature from −40 °C to +125 °C with

JEDEC Grade B ±1 °C accuracy between +75 °C and +95 °C and also provide 256 bytes

of EEPROM memory communicating via the I²C-bus/SMBus. It is typically mounted on a

Dual In-line Memory Module (DIMM) measuring the DRAM temperature in accordance

with the new JEDEC (JC-42.4) Mobile Platform Memory Module Temperature Sensor

Component specification and also replacing the Serial Presence Detect (SPD) which is

used to store memory module and vendor information.

The SE97 thermal sensor operates over the V_DDrange of 3.0 V to 3.6 V and the EEPROM

over the range of 3.0 V to 3.6 V write and 1.7 V to 3.6 V read.

Placing the Temp Sensor (TS) on a DIMM allows accurate monitoring of the DIMM module

temperature to better estimate the DRAM case temperature (T_case) to prevent it from

exceeding the maximum operating temperature of 85 °C. The chip set throttles the

memory traffic based on the actual temperatures instead of the calculated worst-case

temperature or the ambient temperature using a temp sensor mounted on the

motherboard. There is up to 30 % improvement in thin and light notebooks that are using

one or two 1 GB SO-DIMM modules. The TS is required on DDR3 RDIMM and RDIMM

ECC. Future uses of the TS will include more dynamic control over thermal throttling, the

ability to use the Alarm Window to create multiple temperature zones for dynamic

throttling and to save processor time by scaling the memory refresh rate.

The TS consists of a ΔΣ Analog-to-Digital Converter (ADC) that monitors and updates its

own temperature readings 10 times per second, converts the reading to a digital data, and

latches them into the data temperature register. User-programmable registers, the

specification of upper/lower alarm and critical temperature trip points, EVENT output

control, and temperature shutdown, provide flexibility for DIMM temperature-sensing

applications.

When the temperature changes beyond the specified boundary limits, the SE97 outputs

an EVENT signal using an open-drain output that can be pulled up between 0.9 V and

3.6 V. The user has the option of setting the EVENT output signal polarity as either an

active LOW or active HIGH comparator output for thermostat operation, or as a

temperature event interrupt output for microprocessor-based systems. The EVENT output

can even be configured as a critical temperature output.

The EEPROM is designed specifically for DRAM DIMMs SPD. The lower 128 bytes

(address 00h to 7Fh) can be Permanent Write Protected (PWP) or Reversible Write

Protected (RWP) by software. This allows DRAM vendor and product information to be

stored and write protected. The upper 128 bytes (address 80h to FFh) are not write

protected and can be used for general purpose data storage.

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SESA-1502-2B	DEC	获取价格	15 AMP SUPER-EFFICIENT RECTIFIERS
SESA-200-1B	DEC	获取价格	2 AMP SUPER-EFFICIENT RECTIFIERS/ULTRAFAST RECOVERY DIODES
SESA-300-1B	DEC	获取价格	3 AMP SUPER-EFFICIENT RECTIFIERS
SESA-300-2B	DEC	获取价格	3 AMP SUPER-EFFICIENT RECTIFIERS
SESA-301-1B	DEC	获取价格	3 AMP ULTRAFAST RECOVERY DIODES
SESA-301-2B	DEC	获取价格	3 AMP ULTRAFAST RECOVERY DIODES

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