Datasheet > SEP8506

SEP8506

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		二极管
页数	文件大小	规格书
4页	314K
描述
GaAs Infrared Emitting Diode

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SEP8506 数据手册

SEP8506

GaAs Infrared Emitting Diode

FEATURES

Side-emitting plastic package

50¡ (nominal) beam angle

935 nm wavelength

Mechanically and spectrally matched to

SDP8406 phototransistor, SDP8106

photodarlington and SDP8000/8600 series

Schmitt trigger

INFRA-20.TIF

DESCRIPTION

OUTLINE DIMENSIONS in inches (mm)

The SEP8506 is a gallium arsenide infrared emitting

diode molded in a side-emitting red plastic package.

The chip is positioned to emit radiation through a plastic

lens from the side of the package.

Tolerance

3 plc decimals

2 plc decimals

±0.005(0.12)

±0.020(0.51)

DIM_071.ds4

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

12 3 4

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型号	品牌	描述	获取价格	数据表
SEP8506-001	HONEYWELL	Infrared LED, 4.45mm, 1-Element, 935nm,	获取价格
SEP8506-003	HONEYWELL	Infrared LED, 4.45mm, 1-Element, 935nm,	获取价格
SEP8506-1	HONEYWELL	Infrared LED, 1-Element, 935nm, PLASTIC PACKAGE-2	获取价格
SEP8506-2	HONEYWELL	Infrared LED, 1-Element, 935nm, PLASTIC PACKAGE-2	获取价格
SEP8506-4	HONEYWELL	Infrared LED, 1-Element, 935nm, PLASTIC PACKAGE-2	获取价格
SEP8507-001	HONEYWELL	Infrared LED, 2.54mm, 1-Element, 935nm,	获取价格