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SDR955M PDF预览

SDR955M

更新时间: 2024-10-02 04:32:23
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 83K
描述
50A, 35nsec, 300-600 V Hyper Fast Rectifier

SDR955M 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:S-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
应用:HYPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.65 VJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3最大非重复峰值正向电流:450 A
元件数量:1相数:1
端子数量:3最高工作温度:200 °C
最大输出电流:50 A封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR955M 数据手册

 浏览型号SDR955M的Datasheet PDF文件第2页 
SDR953M & Z  
Thru  
SDR956M & Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
__ __ __ __  
50A, 35nsec, 300-600 V  
Hyper Fast Rectifier  
SDR95  
¦
¦
¦
¦
+
Screening 2/ __ = Not Screened  
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
¦
¦
·
·
·
·
·
·
·
·
Hyper Fast Recovery: 35nsec Maximum 3/  
High Surge Rating  
¦
¦
+
Leg Bend Option  
(See Figure 1)  
+
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed Low Profile Package  
Gold Eutectic Die Attach Available  
Ultrasonic Aluminum Wire Bonds  
Higher Voltages and Faster Recovery Times  
Available, Contact Factory  
Package M = TO-254, Z = TO-254Z  
¦
¦
+
Voltage 3 = 300V, 4 = 400V,  
5 = 500V, 6 = 600V.  
·
·
Ceramic Seal for Improve d Hermeticity Available  
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings  
Symbol  
Value  
Units  
300  
400  
500  
600  
SDR953M & Z  
SDR954M & Z  
SDR955M & Z  
SDR956M & Z  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
And DC Blocking Voltage  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)  
50  
450  
Io  
IFSM  
Amps  
Amps  
ºC  
5/  
Peak Surge Current  
4/  
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)  
-65 to +200  
Operating & Storage Temperature  
TOP & TSTG  
Maximum Total Thermal Resistance  
Junction to Case  
RqJC  
0.7  
ºC/W  
-
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Recovery Conditions: I =.5 Amp, IR = 1A, IRR = .25A.  
F
4/ Pins 2 and 3 Tied Together.  
5/ Available with higher surge ratings.  
-
TO -254 (M)  
-
TO -254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0029C  
DOC  

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