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SDR6004MTX PDF预览

SDR6004MTX

更新时间: 2024-02-21 10:15:31
品牌 Logo 应用领域
SSDI 二极管快速恢复二极管
页数 文件大小 规格书
3页 144K
描述
Rectifier Diode, 1 Phase, 1 Element, 45A, 400V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN

SDR6004MTX 技术参数

生命周期:Active零件包装代码:TO-254
包装说明:HERMETIC SEALED, TO-254Z, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-254
JESD-30 代码:S-XSFM-P3最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:3最大输出电流:45 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.1 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR6004MTX 数据手册

 浏览型号SDR6004MTX的Datasheet PDF文件第2页浏览型号SDR6004MTX的Datasheet PDF文件第3页 
PRELIMINARY  
SDR6006 series  
Solid State Devices, Inc.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
60Apk 60nsec  
400 to 600 V  
Ultrafast Rectifier  
SDR60 __ __ __ __  
Screening2/  
_ = Not Screened  
TX = TX Level  
TXV = TXV  
S = S Level  
Features:  
Ultrafast Recovery: 100nsec Maximum  
High Surge Rating  
Package  
M = TO-254  
Z = TO-254Z  
N = TO-258  
P = TO-259  
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed, Isolated Package  
providing enhanced thermal performance  
Eutectic Die Attach  
TX, TXV, and S Level Screening iaw MIL-  
PRF-19500 Available  
hyperfast version available (typ 30 ns)  
Configuration n/a (single diode)  
Voltage 04 = 400 V  
05 = 500 V  
06 = 600 V  
Maximum Ratings  
Symbol  
Value  
Units  
SDR6004  
SDR6005  
SDR6006  
400  
500  
600  
Peak Repetitive Reverse Voltage  
VRRM  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TC = 100 °C)  
Io  
IF  
60  
45  
Amps, pk  
Amps  
Continuous Rectified Forward Current  
(TC = 25 °C; limited by construction)  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, 1 pulse)  
IFSM  
TOP & TSTG  
RθJC  
500  
Amps  
ºC  
Operating & Storage Temperature  
-65 to +200  
Maximum Total Thermal Resistance  
Junction to Case  
1.0  
(0.7 typ)  
ºC/W  
TO-254 (M)  
TO-254Z (Z)  
TO-258  
TO-259  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0121A  
DOC  

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