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SDP20S30 PDF预览

SDP20S30

更新时间: 2024-02-10 02:57:16
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管局域网
页数 文件大小 规格书
8页 210K
描述
Silicon Carbide Schottky Diode

SDP20S30 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:36 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:65 W认证状态:Not Qualified
最大重复峰值反向电压:300 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SDP20S30 数据手册

 浏览型号SDP20S30的Datasheet PDF文件第2页浏览型号SDP20S30的Datasheet PDF文件第3页浏览型号SDP20S30的Datasheet PDF文件第4页浏览型号SDP20S30的Datasheet PDF文件第5页浏览型号SDP20S30的Datasheet PDF文件第6页浏览型号SDP20S30的Datasheet PDF文件第7页 
SDP20S30  
SDB20S30  
Preliminary data  
Silicon Carbide Schottky Diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Switching behavior benchmark  
No reverse recovery  
Product Summary  
V
V
300  
23  
RRM  
Q
nC  
A
c
I
2x10  
F
No temperature influence on  
the switching behavior  
P-TO220-3.SMD  
P-TO220-3-1.  
No forward recovery  
Type  
SDP20S30  
SDB20S30  
Package  
P-TO220-3-1.  
P-TO220-3.SMD Q67040-S4374  
Ordering Code  
Q67040-S4419  
Marking  
D20S30  
S20S30  
1
2
3
Maximum Ratings,at T = 25 °C, unless otherwise specified (per leg)  
j
Parameter  
Continuous forward current, T =100°C  
Symbol  
Value  
10  
Unit  
A
I
F
C
I
14  
RMS forward current, f=50Hz  
FRMS  
Surge non repetitive forward current, sine halfwave I  
36  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
45  
FRM  
FMAX  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
100  
t =10µs, T =25°C  
p
C
2
2
6.5  
300  
300  
i t value, T =25°C, t =10ms  
i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
V
P
RRM  
RSM  
tot  
Surge peak reverse voltage  
65  
W
Power dissipation, single diode mode, T =25°C  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2001-09-07  

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