Datasheet > SDP20S30_10

SDP20S30_10

更新时间： 2022-12-20 13:19:20

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管开关
页数	文件大小	规格书
8页	325K
描述
Silicon Carbide Schottky Diode Switching behavior benchmark

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SDP20S30_10 数据手册

SDP20S30

thinQ!¥ SiC Schottky Diode

Silicon Carbide Schottky Diode

• Revolutionary semiconductor

material - Silicon Carbide

Product Summary

300

RRM

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

2x10

P-TO220

• No forward recovery

Type

SDP20S30

Package

P-TO220-3

Ordering Code

Q67040-S4419

Marking

D20S30

Maximum Ratings, at T = 25 °C, unless otherwise specified (per leg)

Parameter

Continuous forward current, T =100°C

Symbol

Value

Unit

RMS forward current, f=50Hz

FRMS

Surge non repetitive forward current, sine halfwave I

FSM

T =25°C, t =10ms

Repetitive peak forward current

FRM

T =150°C, T =100°C, D=0.1

Non repetitive peak forward current

100

FMAX

t =10µs, T =25°C

6.5

300

i t value, T =25°C, t =10ms

³i dt

A²s

Repetitive peak reverse voltage

RRM

Surge peak reverse voltage

RSM

Power dissipation, single diode mode, T =25°C

tot

°C

Operating and storage temperature

T , T

-55... +175

stg

Page 1

2009-11-25

Rev. 1.5

12 3 4 5 6 7 8

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