Datasheet > SD51_1

SD51_1

更新时间： 2024-01-20 21:54:27

品牌	Logo	应用领域
NAINA		整流二极管
页数	文件大小	规格书
2页	98K
描述
Schottky Barrier Rectifier Diode

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中文翻译

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数据手册

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SD51_1 数据手册

SD51

Naina Semicoonductor Ltd.

Schottky Barrier Rectifier Diode

Features

•

Fast Switching

Low forward voltage drop, V_F

Guard ring protection

High surge capacity

High efficiency, low power loss

Electrical Ratings (T_C= 25⁰C, unless otherwiise noted)

Parameter

Symbol Values Units

Repetitive peak reverse voltage

V_RRM

DC blocking voltage

V_DC

Non-repetitive peak reverse

voltage

V_RSM

Average rectified forward current

(T_C= 85⁰C)

I_F(AV)

DO-203AB (DO-5)

Non-repetitive peak surge current

(surge applied at rated load

conditions, halfwave, single phase,

60 Hz

I_FSM

600

Maximum Ratings (T_C= 25⁰C, unless other

ise noted)

Parameter

Test Conditions

Symb

Values

Units

I_F= 30 A

0.58

I_F= 60 A

0.66

0.86

Maximum instantaneous forward voltage

V_F

I_F= 120 A

T_C= 25⁰C

Maximum instantaneous reverse current at rated DC voltage

I_R

T_C= 125⁰C

125

Thermal & Mechanical Specifications (T_E=

Parameters

5⁰C, unless otherwise noted)

Symbol

R_th(JC)

T_J

lues

Units

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

1.0

⁰C/W

⁰C

-65

tto +150

T_stg

tto +150

Mounting torque (non-lubricated threads)

Approximate allowable weight

5.6

in-lb

中文翻译

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