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SD1455 PDF预览

SD1455

更新时间: 2024-01-09 16:33:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管电视射频微波
页数 文件大小 规格书
4页 56K
描述
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

SD1455 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N最大集电极电流 (IC):8 A
配置:Single最小直流电流增益 (hFE):10
最高工作温度:175 °C极性/信道类型:NPN
最大功率耗散 (Abs):140 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

SD1455 数据手册

 浏览型号SD1455的Datasheet PDF文件第2页浏览型号SD1455的Datasheet PDF文件第3页浏览型号SD1455的Datasheet PDF文件第4页 
SD1455  
RF & MICROWAVE TRANSISTORS  
TV/LINEAR APPLICATIONS  
.
.
.
.
.
.
.
170 - 230 MHz  
25 VOLTS  
IMD 55dB  
COMMON EMITTER  
GOLD METALLIZATION  
HIGH SATURATED POWER CAPABILITY  
DIFFUSED EMITTER BALLAST  
RESISTORS  
DESIGNED FOR HIGH POWER LINEAR  
OPERATION  
.500 4L STUD (M130)  
epoxy sealed  
.
.
ORDER CODE  
BRANDING  
SD1455  
SD1455  
POUT 20 W MIN. WITH 8.0 dB GAIN  
=
PIN CONNECTION  
DESCRIPTION  
The SD1455 is a gold metallized epitaxial silicon  
NPN planar transistor using diffused emitter ballast  
resistors for high linearity Class A operation in  
VHF and Band III television transmitters and trans-  
posers.  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Value  
35  
Unit  
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
60  
V
4.0  
V
8.0  
A
PDISS  
TJ  
Power Dissipation  
140  
+200  
W
°
°
Junction Temperature  
Storage Temperature  
C
C
TSTG  
65 to +150  
THERMAL DATA  
RTH(j-c) Junction-Case Thermal Resistance  
1.5  
°C/W  
1/4  
July 1993  

SD1455 替代型号

型号 品牌 替代类型 描述 数据表
BLV33 ASI

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NPN SILICON RF POWER TRANSISTOR
TPV375 ASI

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NPN SILICON RF POWER TRANSISTOR

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