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TPV375 PDF预览

TPV375

更新时间: 2024-02-05 16:20:25
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
2页 29K
描述
NPN SILICON RF POWER TRANSISTOR

TPV375 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.58
最大集电极电流 (IC):10 A配置:Single
最小直流电流增益 (hFE):20最高工作温度:200 °C
极性/信道类型:NPN最大功率耗散 (Abs):100 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

TPV375 数据手册

 浏览型号TPV375的Datasheet PDF文件第2页 
TPV375  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The TPV375 is a Common Emitter  
Device Designed for Class A  
PACKAGE STYLE .500 4L STUD  
Television Band III Applications.  
FEATURES INCLUDE:  
· Gold Metalization  
· Emitter Ballasting  
MAXIMUM RATINGS  
IC  
8 A  
VCB  
PDISS  
TJ  
65 V  
140 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.5 OC/W  
1 = COLLECTOR  
2 & 4 = EMITTER  
TSTG  
qJC  
3 = BASE  
ORDER CODE: ASI10760  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
BVCER  
BVCBO  
BVEBO  
hFE  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 5.0 V  
35  
60  
65  
4.0  
20  
V
RBE = 10 W  
V
V
V
IC = 1.0 A  
120  
85  
---  
VCB = 30 V  
f = 1.0 MHz  
Pout = 20 W  
Cob  
pF  
---  
GPE  
VCE = 28 V  
IC = 2.5 A  
VSWR = ¥ :1  
IC = 2.5 A  
8.0  
9.0  
y
f = 225 MHz  
NO DEGRADATION IN OUTPUT POWER  
VCE = 28 V  
Pref =14 W  
IMD3  
-55  
dB  
f = 225 MHz  
Vision = -8.0 dB  
Snd. = -7.0 dB  
SB = -16 dB  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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