Datasheet > SD107WS

SD107WS

更新时间： 2024-10-01 04:32:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
2页	153K
描述
Silicon Epitaxial Planar Diode

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SD107WS 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Diode

SD107WS

FEATURES

Lead-free

Low forward voltage drop.

Guard ring die construction for transient protection.

Ideal for low logic level applications.

Low capacitance.

APPLICATIONS

Schottky barrier switching

SOD-323

ORDERING INFORMATION

Type No.

Marking

Package Code

SOD-323

SD107WS

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Peak Repetitive reverse voltage

V_RRM

V_R(RMS)

I_F

RMS Reverse Voltage

Forward continuous Current

Non-Repetitive Peak Forward Surge Current @t_p≤10ms

Power dissipation

100

750

250

500

150

℃/W

℃

I_FSM

P_d

Thermal resistance junction to ambient air

Junction temperature

R_θjA

T_j

Storage temperature

T_STG

-65~+150 ℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Min. Typ. Max. Unit

Conditions

Reverse breakdown voltage

V_R

I_R=100μA

I_F=2mA

300

360

470

580

I_F=15mA

Forward voltage

V_F

550

800

1.0

I_F=50mA

I_F=100mA

V_R=25V

Reverse current

I_R

μA

Capacitance between terminals

C_T

V_R=10V,f=1MHz

Document number: BL/SSSKB027

Rev.A

www.galaxycn.com

中文翻译

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