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SCF25C60 PDF预览

SCF25C60

更新时间: 2024-10-03 03:03:39
品牌 Logo 应用领域
SEMIWELL 可控硅整流器
页数 文件大小 规格书
5页 715K
描述
Silicon Controlled Rectifiers

SCF25C60 数据手册

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SemiWell Semiconductor  
SCF25C60  
Silicon Controlled Rectifiers  
Symbol  
3. Gate  
Features  
2. Anode  
1. Cathode  
Repetitive Peak Off-State Voltage : 600V  
R.M.S On-State Current ( I  
= 25 A )  
T(RMS)  
Low On-State Voltage (1.3V(Typ.)@ I  
)
TM  
Isolation Voltage ( V  
= 1500V AC )  
ISO  
TO-220F  
General Description  
Standard gate triggering SCR is fully isolated package suitable for  
the application where requiring high bidirectional blocking voltage  
capability and also suitable for over voltage protection ,motor con-  
trol circuit in power tool, inrush current limit circuit and heating  
control system.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
Average On-State Current  
R.M.S On-State Current  
Condition  
Ratings  
600  
Units  
V
A
A
Half Sine Wave : TC = 69 °C  
180° Conduction Angle  
IT(AV)  
16  
IT(RMS)  
25  
1/2 Cycle, 60Hz, Sine Wave  
Non-Repetitive  
ITSM  
I2t  
Surge On-State Current  
275  
380  
A
I2t for Fusing  
A2s  
t = 8.3ms  
di/dt  
PGM  
PG(AV)  
IFGM  
VRGM  
VISO  
TJ  
Critical rate of rise of on-state current  
Forward Peak Gate Power Dissipation  
Forward Average Gate Power Dissipation  
Forward Peak Gate Current  
50  
A/  
W
W
A
20  
Over any 20ms period  
A.C. 1 minute  
1
5
Reverse Peak Gate Voltage  
5.0  
V
Isolation Breakdown Voltage(R.M.S.)  
Operating Junction Temperature  
Storage Temperature  
1500  
V
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
Information offers: http://www.kkg.com.cn  
Aug, 2003. Rev. 1  
1/5  
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.  

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