Datasheet > SCD6C60

SCD6C60

更新时间： 2024-10-03 09:32:47

品牌	Logo	应用领域
TGS		可控硅整流器
页数	文件大小	规格书
1页	63K
描述
Silicon Controlled Rectifiers

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SCD6C60 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

SCD6C60

Silicon Controlled Rectifiers

DESCRIPTION

Standard gate triggering SCR is suitable for the application where

requiring high bidirectional blocking voltage capability and also

suitable for over voltage protection ,motor control circuit in power

tool, inrush current limit circuit and heating control system.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Symbol

Typ

Unit

Repetitive peak off-state

voltages

V_DRM

V_RRM

600

Average on-state current

RMS on-state current

I_T(AV)

3.8

6.0

I_T(RMS)

Non-repetitive peak

on-state current

I_TSM

Max. Operating Junction

Temperature

T_j

110

^oC

TO-252

Storage Temperature

T_stg

-45~150

( Ta = 25 ^OC)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

V_DRM

V_RRM

Repetitive peak off-state voltages

600

—

Average on-state current

RMS on-state current

I_T(AV)

I_T(RMS)all conduction angles

half sine wave; T_mb< 103 ^oC

—

3.8

6.0

—

1.6

On-state voltage

Holding current

V_TM

I =9.0A,tp=380 s

—

I_H

I_L

V_D=12 V; I_GT= 0.1 A

Latching current

Gate trigger current

Gate trigger voltage

I_GT

V_D=12 V; I_T= 0.1 A

V_GT

1.5

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