SC141
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Repetitive peak off-stage voltage, gate open
SC141A
SC141B
SC141D
SC141E
SC141M
SC141N
100
200
400
500
600
700
VDRM
Volts
RMS on-state current (TC = 80°C)
IT(RMS)
ITSM
6
Amps
Amps
Peak non-repetitive surge current (One Cycle, 60Hz)
80
Circuit fusing considerations
I2t
A2s
(t = 8.3ms)
26.5
10
Peak gate power (pulse width = 10µs)
Average gate power (TC = 80°C, t = 8.3ms)
Peak gate current (pulse width = 10µs)
Peak gate voltage
PGM
PG(AV)
IGM
Watts
Watts
Amps
Volts
°C
0.5
3.5
VGM
TJ
10
Operating junction temperature range
Storage temperature range
-40 to +100
-40 to +125
Tstg
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal resistance, junction to case
RӨJC
2.2
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak off state current
(VD = VDRM, gate open)
TC = 25°C
IDRM
mA
-
-
-
-
0.1
0.5
TC = 110°C
Peak on-state voltage
VTM
Volts
V/µs
≤ 2%)
(ITM = 8.5A peak, pulse width ≤ 1 ms, duty cycle
-
-
-
1.83
-
Critical rate of rise of off-state voltage
dv/dt
(VD = Rated VDRM, gate open, exponential waveform, TC = 100°C)
50
Critical rate of rise of commutating voltage
dv/dt(c)
V/µs
(IT(RMS) = Rated IT(RMS), VD = Rated VDRM, commutating di/dt = 3.2A/ms, gate open, TC =
80°C)
4
-
-
Rev. 20131205