5秒后页面跳转
SBL20A200F-C PDF预览

SBL20A200F-C

更新时间: 2024-10-03 01:20:27
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
2页 160K
描述
Low VF Planar MOS Barrier Schottky Rectifier

SBL20A200F-C 数据手册

 浏览型号SBL20A200F-C的Datasheet PDF文件第2页 
SBL20A200F  
Voltage 200V 20.0 Amp  
Low VF Planar MOS Barrier Schottky Rectifier  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
ITO-220  
FEATURES  
B
N
Ultra Low Forward Voltage Drop  
D
E
Excellent High Temperature Stability  
Patented Super Barrier Rectifier Technology  
Fast Switching Capability  
High Reliability  
High Surge Current Capability  
Epitaxial Construction  
M
J
A
C
MECHANICAL DATA  
H
L
Case: ITO-220  
Case Material: Molded Plastic, UL Flammability  
Classification Rating 94V-0  
K
L
G
F
Epoxy: UL94V-0 Rate Flame Retardant  
Terminals: Matte Tin Finish annealed over Copper Leadframe  
Solderable per MIL-STD-202, Method 208  
Polarity: As Marked  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
14.50  
Max.  
16.50  
10.72  
14.22  
5.10  
Min.  
2.70  
0.90  
0.30  
2.34  
2.40  
φ 3.0  
Max.  
4.35  
1.70  
0.95  
2.75  
3.60  
φ 3.8  
A
B
C
D
E
F
H
J
K
L
9.50  
12.60  
4.20  
2.30  
2.30  
0.30  
Mounting position: Any  
3.30  
3.10  
M
N
ORDER INFORMATION  
Part Number  
G
0.75  
Type  
SBL20A200F  
Lead (Pb)-free  
1
3
2
SBL20A200F-C  
Lead (Pb)-free and Halogen-free  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Symbol  
Rating  
200  
140  
10  
Unit  
VRRM  
V
V
VRMS  
(Per Leg)  
Maximum Average Forward Rectified Current  
IF  
A
A
(Per Device)  
20  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
Superimposed on rated load (JEDEC method)  
IFSM  
200  
Typical Thermal Resistance  
RθJC  
4
°C /W  
°C  
Operating and Storage Temperature Range  
TJ,TSTG  
-55~150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Typ.  
0.71  
0.76  
0.92  
0.71  
1
Max.  
Unit  
Test Condition  
IF=3A, TJ=25°C  
-
-
IF=5A, TJ=25°C  
Instantaneous Forward Voltage  
VF  
V
0.96  
IF=10A, TJ=25°C  
IF=10A, TJ=125°C  
VR=140V, TJ=25°C  
VR=200V, TJ=25°C  
VR=200V, TJ=125°C  
-
-
uA  
Reverse Current  
IR  
-
50  
-
4
mA  
pF  
Typical Junction Capacitance 1  
Note:  
CJ  
210  
-
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
06-Jun-2018 Rev. C  
Page 1 of 2  

与SBL20A200F-C相关器件

型号 品牌 获取价格 描述 数据表
SBL20A60 SECOS

获取价格

Low VF Planar MOS Barrier Schottky Rectifiers
SBL20A60-C SECOS

获取价格

Low VF Planar MOS Barrier Schottky Rectifiers
SBL20A60F SECOS

获取价格

Low VF Planar MOS Barrier Schottky Rectifier
SBL20A60F_18 SECOS

获取价格

Low VF Planar MOS Barrier Schottky Rectifier
SBL20A60F-C SECOS

获取价格

Low VF Planar MOS Barrier Schottky Rectifier
SBL20B45CTH SIRECT

获取价格

Power Schottky Rectifier - 20Amp 45Volt
SBL20B60CGH SIRECT

获取价格

Power Schottky Rectifier - 20Amp 60Volt
SBL20B60CRH SIRECT

获取价格

Power Schottky Rectifier - 20Amp 60Volt
SBL20B60CTH SIRECT

获取价格

Power Schottky Rectifier - 20Amp 60Volt
SBL20B60FCTH SIRECT

获取价格

Power Schottky Rectifier - 20Amp 60Volt