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SBL2030PT-E3/45 PDF预览

SBL2030PT-E3/45

更新时间: 2024-02-13 02:06:15
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线功效局域网
页数 文件大小 规格书
4页 384K
描述
Dual Common-Cathode Schottky Rectifier

SBL2030PT-E3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-247AD
包装说明:R-PSFM-T3针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.54
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOWER POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.6 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

SBL2030PT-E3/45 数据手册

 浏览型号SBL2030PT-E3/45的Datasheet PDF文件第2页浏览型号SBL2030PT-E3/45的Datasheet PDF文件第3页浏览型号SBL2030PT-E3/45的Datasheet PDF文件第4页 
SBL2030PT & SBL2040PT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder dip 260 °C, 40 s  
3
2
1
TO-247AD (TO-3P)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
20 A  
MECHANICAL DATA  
VRRM  
IFSM  
30 V, 40 V  
250 A  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
VF  
0.60 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
125 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
SBL2030PT  
SBL2040PT  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
30  
21  
30  
40  
28  
40  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
20  
250  
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 125  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
SBL2030PT  
SBL2040PT  
UNIT  
Maximum instantaneous forward  
voltage per diode (1)  
10 A  
VF  
0.6  
V
Maximum instantaneous reverse  
current at rated DC blocking  
voltage per diode (1)  
TC = 25 °C  
TC = 100 °C  
1.0  
50  
IR  
mA  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88728  
Revision: 25-Mar-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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