JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L/TO-220F-B Plastic-Encapsulate Diode
SBD3045TCTB、SBDF3045TCTB SCHOTTKY BARRIER RECTIFIER
MAIN CHARACTERISTICS
IO
30(2×15)A
45 V
VRRM
Tj
TO-220-3L
TO-220F-B
150 ℃
VF(typ)
0.44V (@Tj=125℃)
FEATURES
Low Power Loss,High Efficiency
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
1
2
MARKING
3
1
2
3
1. ANODE
2. CATHODE
3. ANODE
1
3
SBD(F)3045TCTB = Device code
2
SBD
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
SBD
3045TCTB
F3045TCTB
XXXX
XXXX
MAXIMUM RATINGS ( Ta=25℃℃ unless otherwise noted )
SBD
Symbol
Parameter
Peak repetitive reverse voltage
Unit
F3045TCTB
3045TCTB
VRRM
VRWM
VR
45
V
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
31.5
30
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
8.3ms half sine wave)
IFSM
280
A
RΘJc
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃/W
℃
2.0
3.0
RΘJA
Tj
℃/W
℃
62.5
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
Reverse voltage
IR=0.1mA
V(BR)
45
uA
mA
Tj =25℃
40
23
150
IR
Reverse current
Forward voltage
V
R=45V
Tj =125℃
Tj =25℃
Tj =125℃
V
V
V
V
0.44
IF=10A
0.37
0.48
VF
Tj =25℃
0.55
IF=15A
Tj =125℃
0.44
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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Rev. - 1.0
1