Datasheet > SBDB10100SCTB

SBDB10100SCTB

更新时间： 2024-11-17 14:55:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	4528K
描述
TO-263-2L

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SBDB10100SCTB 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-263-2L Plastic-Encapsulate Diode

SBDB10100SCTB SCHOTTKY BARRIER RECTIFIER

MAIN CHARACTERISTICS

I_O

10（2×5）A

100 V

V_RRM

T_j

TO-263-2L

150 ℃

V_F(typ)

0.54V （@Tj=125℃）

FEATURES

1. ANODE

2. CATHODE

3. ANODE

 Low Power Loss,High Efficiency

 Guard Ring Die Construction for Transient Protection

 High Current Capability and Low Forward Voltage Drop

MARKING

SBDB10100SCTB = Device code

SBD

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

B10100SCTB

XXXX

MAXIMUM RATINGS ( T_a=25℃℃ unless otherwise noted )

SBD

Symbol

Parameter

Peak repetitive reverse voltage

Unit

F10100SCTB

10100SCTB

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

100

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current (

8.3ms half sine wave)

I_FSM

150

R_ΘJc

Thermal resistance from junction to case ,Tc=25

Thermal resistance from junction to ambient

Junction temperature

℃/W

℃

2.0

3.0

R_ΘJA

T_j

℃/W

℃

62.5

150

Storage temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

V_(BR)

I_R=1mA

100

Tj =25℃

10.0

5.0

100

I_R

Reverse current

Forward voltage

_R=100V

Tj =125℃

Tj =25℃

Tj =125℃

0.50

I_F=3A

0.45

0.57

V_F

Tj =25℃

0.63

IF=5A

Tj =125℃

0.54

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 1.0

12 3 4

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