SBB-5089
SBB-5089Z
0.05-6 GHz, Cascadable
RoHS Compliant
& Green Package
Pb
Product Description
Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-5089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
Active Bias InGaP/GaAs HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Product Features
• Available in Lead free, RoHS compliant, & Green packaging
• Wideband Flat Gain to 4GHz: +/-1.1dB
• P1dB = 20.4 dBm @ 1950MHz
Gain & Return Loss vs. Frequency (w/ BiasTees)
30
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
20
S21
10
• Low Thermal Resistance
• MSL 1 moisture rating
0
-10
S22
-20
Applications
• PA Driver Amplifier
S11
-30
-40
• Cellular, PCS, GSM, UMTS
• Wideband Intrumentation
• Wireless Data, Satellite Terminals
0
1
2
3
4
5
6
Frequency (GHz)
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
22
850 MHz
1950 MHz
6000 MHz
19
20.5
20
S21
Small Signal Gain
dB
18.5
14.5
21.5
17.5
16
850 MHz
1950 MHz
20.5
20.5
P1dB
IP3
Output Power at 1 dB Compression
Third Order Intercept Point
dBm
dBm
19
33
850 MHz
1950 MHz
38.5
35
S
11, S22: Minimum 10dB Return Loss (typ.)
Bandwidth
MHz
dB
3000
14
S11
S22
Input Return Loss
1950 MHz
1950 MHz
1950 MHz
1950 MHz
10
10
Output Return Loss
dB
14
S12
Reverse Isolation
dB
23.3
4.2
5
NF
Noise Figure
dB
4.9
5.25
92
VD
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
ID
mA
°C/W
65
75
RTH, j-l
69.9
Test Conditions:
VD = 5V
ID = 75 mA Typ.
ZS = ZL = 50 Ohms
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
TL = 25°C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103839 Rev E