Datasheet > SBB5089ZSR

SBB5089ZSR

更新时间： 2024-01-09 02:35:45

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
10页	535K
描述
50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

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SBB5089ZSR 数据手册

SBB5089Z

50MHz to 6000MHz, CASCADABLE

ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

Package: SOT-89

Product Description

Features

RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier uti-

lizing a Darlington configuration with an active bias network. The active

bias network provides stable current over temperature and process Beta

variations. Designed to run directly from a 5V supply, the SBB5089Z does

not require a dropping resistor as compared to typical Darlington amplifi-

ers. The SBB5089Z product is designed for high linearity 5V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Wideband Flat Gain to 4GHz:

±1.1dB



=20.4dBm at 1950MHz

1dB



Single Fixed 5V Supply

Robust 1000V ESD, Class 1C

Patented Thermal Design and

Bias Circuit

Gain and Return Loss versus Frequency

(with BiasTees)

Optimum Technology

Matching® Applied



Low Thermal Resistance

30.0

20.0

10.0

0.0

GaAs HBT

Applications

GaAs MESFET



PA Driver Amplifier

InGaP HBT



Cellular, PCS, GSM, UMTS

Wideband Intrumentation

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

-10.0

-20.0

-30.0

-40.0

Wireless Data, Satellite Termi-

nals

25C

Si BJT

0.0

1.0

2.0

3.0

4.0

5.0

6.0

GaN HEMT

RF MEMS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

Typ.

20.5

19.0

15.5

20.5

20.0

38.5

35.0

3000

13.0

14.0

23.3

3.9

Max.

22.0

21.5

17.5

Small Signal Gain

19.0

18.3

14.5

dBm

MHz

850MHz

1950MHz

6000MHz

850MHz

1950MHz

850MHz

1950MHz

Output Power at 1dB Compression

Third Order Intercept Point

19.0

33.0

Bandwidth

Min. 10dB return loss (typ.)

1950MHz

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

10.0

1950MHz

4.9

Device Operating Voltage

Device Operating Current

Thermal Resistance

4.75

60.0

5.0

75.0

69.9

5.25

92.0

°C/W

junction - lead

Test Conditions: V_D=5V, I_D=75mA Typ., OIP₃Tone Spacing=1MHz, P_OUTper tone=-dBm, T_L=25°C, Z_S=Z_L=50Tested with Bias Tees

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS150622

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