Datasheet > SB5150

SB5150

更新时间： 2024-09-24 14:52:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	3629K
描述
DO-27

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中文翻译

获取价格

数据手册

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SB5150 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-27 Plastic-Encapsulate Diodes

Schottky Rectifier Diode

SB5150 THRU SB5200

Features

●

I_F(AV)

DO-27

●

RRM

150V-200V

High surge current capability

Polarity: Color band denotes cathode

● Low peak forward voltage

Applications

●

Rectifier

Marking

●

SB5150/SB5200

Limiting Values(Absolute Maximum Rating)

SB5

Item

Symbol

Unit

Test Conditions

200

150

V_RRM

150

105

150

200

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

140

200

V_RMS

V_DC

Maximum DC Blocking Voltage

60HZ Half-sine wave, Resistance

load, TL=100℃

I_F(AV)

5.0

Average Forward Current

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

150

T_J

℃

Junction Temperature

Storage Temperature

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

SB5

Item

Symbol Unit

Test Condition

150

200

0.95

V_FM

I_FM=5.0A

0.85

Maximum Peak Forward Voltage

Maximum Peak Reverse Current

Typical junction capacitance

I_RRM1

T =25℃

0.1

mA V_RM=V_RRM

I_RRM2

C_J

10.0

Ta=125℃

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

400

R_θ

Between junction and ambient

Between junction and lead

J-A

℃/W

Typical Thermal Resistance

R_θ

J-L

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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