Datasheet > SB350

SB350

更新时间： 2024-02-16 23:19:27

品牌	Logo	应用领域
森美特 - SUNMATE		二极管 IOT
页数	文件大小	规格书
2页	346K
描述
3.0A Plug-in Schottky diode 50V DO-201 series

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中文翻译

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数据手册

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SB350 数据手册

SB320 - SB3100

SCHOTTKY BARRIER RECTIFIER DIODE

VOLTAGE RANGE: 20 - 100V

CURRENT: 3.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

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Mechanical Data

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

DO-201AD

Dim

Min

25.40

7.20

1.20

4.80

Max

9.50

1.30

5.30

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SB320 SB330 SB340 SB350 SB360 SB380 SB3100 Unit

Peak Repetitive Reverse Voltage

V^RRM

Working Peak Reverse Voltage

DC Blocking Voltage

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

Average Rectified Output Current

(Note 1)

@T_L= 95°C

I^O

3.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

C^j

250

°C/W

°C

R^ꢀ^JA

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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