Datasheet > SB350

SB350

更新时间： 2024-01-29 05:50:45

品牌	Logo	应用领域
DAESAN		二极管 IOT
页数	文件大小	规格书
2页	295K
描述
CURRENT 3.0Amperes VOLTAGE 20 to 100 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB350 数据手册

CURRENT 3.0Amperes

VOLTAGE 20 to 100 Volts

SB320 THRU SB3100

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AD

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

· High current capability, Low forward voltage drop

· High surge capability

0.210(5.3)

0.188(4.8)

DIA.

1.0(25.4)

MIN.

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· High temperature soldering guaranteed :

250℃/10 seconds at terminals,

0.375(9.5)

0.285(7.2)

0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension

Mechanical Data

1.0(25.4)

MIN.

· Case : JEDEC DO-201AD molded plastic body

· Terminals : Plated axial leads, solderable per

MIL-STD-750, Method 2026

· Polarity : Color band denotes cathode end

· Mounting Position : Any

· Weight : 0.041 ounce, 1.15 gram

0.042(1.1)

0.037(0.9)

DIA.

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SB330

SB360

Symbols

SB320

SB340 SB350

SB380 SB3100 Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Volts

Maximum DC blocking Voltage

100

Maximum average forward rectified current

0.375"(9.5mm) lead length(see Fig. 1)

Amps

I(AV

)

3.0

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

FSM

80.0

Amps

Volts

Maximum instantaneous forward voltage

at 3.0A (Note 1)

0.55

0.58

0.85

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

=25℃

3.0

160

A=100℃

Typical junction capacitance (Note 3)

Typical thermal resistance (Note 2)

250

RθJA

RθJL

40.0

10.0

℃/W

℃

Operating junction temperature range

Storage temperature range

Notes:

-55 to +125

-55 to +150

STG

-55 to +150

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to lead vrtical P.C.B. mounted, 0.5"(12.7mm) lead length

with 2.5X2.5"(63.5X63.5mm) copper pads

(3) Measured 1MHz and reverse voltage of 4.0 volts

中文翻译

下载PDF

与SB350相关器件

型号	品牌	获取价格	描述	数据表
SB35005	SURGE	获取价格	35.0 AMP SILICON BRIDGE
SB35005G	SURGE	获取价格	Bridge Rectifier Diode,
SB35005W	SURGE	获取价格	Bridge Rectifier Diode,
SB35005WG	SURGE	获取价格	Bridge Rectifier Diode,
SB3501	SURGE	获取价格	35.0 AMP SILICON BRIDGE
SB35010	SURGE	获取价格	Bridge Rectifier Diode,
SB35010W	SURGE	获取价格	Bridge Rectifier Diode,
SB3501G	SURGE	获取价格	Bridge Rectifier Diode,
SB3501W	SURGE	获取价格	暂无描述
SB3501WG	SURGE	获取价格	Bridge Rectifier Diode,