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SB3100-1.8 PDF预览

SB3100-1.8

更新时间: 2024-01-03 04:12:00
品牌 Logo 应用领域
GSG 肖特基二极管
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描述
Chips for Schottky Diodes

SB3100-1.8 数据手册

  
SB 3XX -1.8  
Chips for Schottky Diodes  
Chip Specification  
General Description:  
Schottky Diode chips with Mo-barrier for switch mode power  
rectifiers with the following features:  
* Guard-ring for stress protection  
* Extremely low forward voltage  
* 125 operation junction temperature  
* reverse avalanche behavior  
Mechanical Data:  
SB 3XX passivated Silicon Chip  
Demension(mm)  
Thickness:  
1,8x1,8  
350 +- 20 µm  
Metallization:  
Top ( Anode ) :  
Al Ag  
Bottom ( Cathode) : TiNiAg  
Forward Current(A)  
3 A  
Reverse Voltage (V):23, 43, 100 V  
Type  
Chip  
VR(V)  
VF(V)@25 C IRM@VRMM  
size(mm)  
1,8x1,8  
1,8x1,8  
1,8x1,8  
at If=1A  
at 25 C  
SB320  
SB340  
SB3100  
23 V  
43 V  
100 V  
440mV  
600mV  
690mV  
0,5mA  
0,5mA  
0,5mA  
Note: Other voltages, Vf & Top Metal AL are available  

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